Voltage various

The quality of the intensity data obtainable has been assessed from an experiment on oxalic acid obtained at 100 K with a CCD detector. In this experiment the contamination of 712 to the measured intensities was eliminated by appropriate choice of the generator voltage. Various criteria for judging the quality of the data are discussed below [2],... 

In principle, for a given thickness of dielectric, a high-k dielectric is preferable to a low-k dielectric for an FFT application, which requires the FFT to exhibit a high drive current at low drive voltage. Various solution-processable high-k dielectrics for low-voltage OFFTs have been used in the literature, such as anodized AI2O3... 

Voltammetry. In a voltammetric sensor the concentration of an ion that is to be measured causes a change in the potential and thereby gets recorded as a function of output voltage. Various standard electrodes are used to generate the initial or zero potential, such as calomel electrodes, standard silver chloride electrodes, and others. If a dropping mercury electrode is used, the method is termed polarography. 

Particle Contamination. In assembling large, high voltage equipment such as coaxial lines, contamination by metal particles may occur which may decrease the dielectric strength under various conditions by 5 to 10-fold (44—45). Metal needles are the worst contaminants and electrostatic traps or adhesive areas have been designed to cope with them (46). 

As can be seen from Eigure 11b, the output voltage of a fuel cell decreases as the electrical load is increased. The theoretical polarization voltage of 1.23 V/cell (at no load) is not actually realized owing to various losses. Typically, soHd polymer electrolyte fuel cells operate at 0.75 V/cell under peak load conditions or at about a 60% efficiency. The efficiency of a fuel cell is a function of such variables as catalyst material, operating temperature, reactant pressure, and current density. At low current densities efficiencies as high as 75% are achievable. 

Semiconductor devices ate affected by three kinds of noise. Thermal or Johnson noise is a consequence of the equihbtium between a resistance and its surrounding radiation field. It results in a mean-square noise voltage which is proportional to resistance and temperature. Shot noise, which is the principal noise component in most semiconductor devices, is caused by the random passage of individual electrons through a semiconductor junction. Thermal and shot noise ate both called white noise since their noise power is frequency-independent at low and intermediate frequencies. This is unlike flicker or ///noise which is most troublesome at lower frequencies because its noise power is approximately proportional to /// In MOSFETs there is a strong correlation between ///noise and the charging and discharging of surface states or traps. Nevertheless, the universal nature of ///noise in various materials and at phase transitions is not well understood. 

Fig. 1. Currents are d-c (dashed lines and empty symbols) and peak a-c (soHd lines and soHd symbols) breakdown voltage vs gas pressure in nickel for the various gaps, noted by values x 10 m on the curves (16). To convert Pa to torr, divide by 133.3.

Fig. 10. Power and voltage characteristics of the nickel—iron cell where the internal resistance of the cell, R, is 0.70 mQ, at various states of discharge ( )...

Using excess voltage, ions can be pumped from the low concentration (activity) side of the electrolyte to the high activity side, during which the storage battery is charged. In another appHcation, the ion activity on one side can be fixed at a known value and the activity on the other side determined for various unknown conditions. 

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