V-alloy

V semiconductor material (e.g. InGaAs semiconductor). Very high purity Ga and In are required for the manufacture of semiconductor grade GaAs substrate material and in the deposition of the III—V alloy epilayer structures on these substrates, for example for the manufacture of laser diodes. 

The production of emitting sources requires further development in material technology, as the emitting wavelength is controlled by the compositions of alloy semiconductors to form heterostructures such as InGaAs/InAs" " or III-V alloy systems. 

We have measured the experimental SRO contribution in PtsV and Pt V alloys. The PtsV SRO displays maxima at (100) positions despite a ground state built with the (1 0) concentration wave. For Pt V, the maxima are not located at special points of the fee lattice. 

The performance of VASP for alloys and compounds has been illustrated at three examples The calculation of the properties of cobalt dislicide demonstrates that even for a transition-metal compound perfect agreement with all-electron calculations may be achieved at much lower computational effort, and that elastic and dynamic properties may be predicted accurately even for metallic systems with rather long-range interactions. Applications to surface-problems have been described at the example of the. 3C-SiC(100) surface. Surface physics and catalysis will be a. particularly important field for the application of VASP, recent work extends to processes as complex as the adsorption of thiopene molecules on the surface of transition-metal sulfides[55]. Finally, the efficiciency of VASP for studying complex melts has been illustrate for crystalline and molten Zintl-phases of alkali-group V alloys. 

Ruthenium, iridium and osmium Baths based on the complex anion (NRu2Clg(H20)2) are best for ruthenium electrodeposition. Being strongly acid, however, they attack the Ni-Fe or Co-Fe-V alloys used in reed switches. Reacting the complex with oxalic acid gives a solution from which ruthenium can be deposited at neutral pH. To maintain stability, it is necessary to operate the bath with an ion-selective membrane between the electrodes . 

Metal alkyls 13 A1R3, GaR3, InR3 (R — Me, Et, Pr1, etc.) Matrix element sources for III V alloys... 

Metal alkyl hydrides 15 (R2A1H)2 or 3 (R = Me, Et), R2AlH(NMe3) Sources for growth of Al-based III-V alloys and A1 CVD... 

Metal hydride adducts 13 AlH3(NMe3), AlH3(NMe2Et), GaH3(NR3) Sources for III-V alloys where carbon must be avoided... 

Figure 8.10. Continuous transition between first- and second-order transfomia-lions in Co-V alloys (a) prediction and (b) experiment (from Inden 1985 and...

W. M. Becker, Band Structure and Optical Properties of Wide-Gap A, jMn,B,v Alloys at Zero Magnetic Field... 

For more than 10 years (138-143) it has been known that by reaction of dispersed Pt on soot with nonnoble metals of Group IV B and V B dispersed alloys are formed. Treating Pt-impregnated carbons, to which salts of these metals had been added, at 900°C in inert atmosphere (Ar) leads to formation of highly dispersed Pt-Cr or Pt-V alloys. The metal salt is reduced to the metal by the soot and forms the respective platinum alloy in situ. These alloy crystallites are reported to be highly active catalysts for phosphoric acid fuel cells. 

Figure 5. Solid composition versus vapor composition for the group lll-V alloys AlxGai-xAs and InAsi-xSbx (89).

The segment then undergoes suitable heat treatment to achieve the desired hardness. With the help of HIP technology it is possible to produce highly wear-resistant tool steels (primarily vanadium-alloyed) but also to combine abrasion- and corrosion-resistant properties as required (Cr-, Mo-, V-alloys). HIP technology (see Section 16.4.1) also allows to specifically create materials for different applications. 

In the nitride alloy systems, accurate measurement of the chemical composition is yet to be developed. SIMS can provide precise determination of the alloy composition, but it is complicated by the matrix effect of the element as well as the difficulties in growing the alloys. The problem of phase separation associated with the growth of InGaN and the mixed group V alloys needs to be addressed. 

Figure 9 (a) Cathodic polarization data for a Ni-Cr-Mo-V alloy steel rotating cylinder... 

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