Ultrathin alumina layers

Growth of La203 on Si as gate dielectrics is possible using La(thd)3 in an MOCVD process. As pointed out in Section V.A.4, the deposited ultrathin films form an interfacial layer of lanthanum silicate with the substrate deteriorating their electrical properties therefore, alumina was introduced as capping layer. 

The methods for preparation of nonporous composite membrane catalyst are discussed in Ref. 10. The porous stainless steel sheets were covered with a dense palladium alloy film by magnetron sputtering [113] or by corolling of palladium alloy foil and porous steel sheet. The electroless plating of palladium or palladium alloy on stainless steel [114] or on porous alumina ceramic [115,116] gives the composite membranes with an ultrathin, dense palladium top layer. 

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