Tunneling current-voltage characteristics

Vilan A (2007) Analyzing molecular current-voltage characteristics with the Simmons tunneling model scaling and linearization. J Phys Chem C 111 4431-4444... 

Amman M, Wilkins R, Ben-Jacob E et al (1991) Analytic solution for the current-voltage characteristic of two mesoscopic tunnel junctions coupled in series. Phys Rev B 43 1146-1149... 

To make the entire eleetronic response linear with respect to tunneling gap s, a logarithmic amplifier is attached at the output of the current amplifier. A logarithmic amplifier can be made from a feedback amplifier, by replacing the feedback resistor with a diode, as shown in Fig. 11.4. The current-voltage characteristics of a good-quality, forward-biased silicon diode follow an exponential law over more than five orders of magnitude ... 

The main role in tunneling through the barrier belongs to the electron velocity component which is perpendicular to the barrier. Thus, to reveal the peculiarities of the current-voltage characteristic of the transition it is possible to confine oneself to a first approximation to a one-dimensional consideration. The left-to-right current of electrons (Fig. 11) is evidently equal to... 

Tunneling junctions are most often produced in a crossed stripe geometry so that 4-terminal measurements of their current-voltage characteristics can be made. Electrical contacts are made to the films ( often with miniature brass "C" clamps ), the samples are mounted in a Dewar insert, and cooled to liquid helium temperatures ( 4.2 ° K or below ). 

Fig. 9.27. Current-voltage characteristics of a double barrier structure with well thickness of 40 A, showing the resonant tunneling features. The predicted voltages of the peaks are indicated (Miyazaki ei at. 1987).

Fig. 9.28. Current-voltage characteristics for a resonant tunneling multilayer exhibiting telegraphic noise. The insert shows the time dependence of the current at a voltage of 0.5 V (Arce and Ley 1989).

Phonon-assisted tunneling (PhAT) model has been shown to explain properly nonlinear current-voltage characteristics and temperature dependence of conductivity in carbon nanotubes and other nanostructures of organic materials [1,2], In this paper, we want to show that this model is workable in explanation of I-V characteristics of inorganic nanodevices (Bi xSbx)2Te3 nanowires measured in a wide temperature range, 1.75-350 K, by Xiao et al. [3] and ZnSnOs nanowires presented in [4]. 

CURRENT-VOLTAGE CHARACTERISTICS AND TUNNEL MAGNETORESISTANCE OF CoFe/MgO/Si NANOSTRUCTURES... 

Current-voltage characteristics of the CoFe/MgO/Si nanostructure were calculated for the work ftinction of CoFe of 4.8 eV, the MgO effective mass of electrons of 0.35 We> MgO electron affinity of 1.5 eV, Si electron affinity of 4.15 eV. The current density tends to saturation at increasing of the applied voltage from 0.2 to 0.5 eV (Fig. 3). In case of changing of temperature from 50 to 360 K the tunnel current through the nanostructure varies insignificantly. Qualitatively the same I-V characteristic behavior was observed for similar structures in [4]. 

All components of the front-end chip have been tested. For the LO/SIS mixer strucure, the current-voltage characteristic (I-V curve) of the LO, when a 7 mA current is applied through the control line, exhibited a pronounced flux-flow step at 0.75 mV. At the same time, the I-V curve of the SIS mixer irradiated by the LO, while its Josephson current is suppressed by current through control line and when LO is biased at flux-flow step, exhibits the photo-assisted tunneling step at hfpj/e below the gap. 

Fig. 6.3. Semiconductor representation for (a) NIN, (b) NIS, and (c) SIS tunnel junctions showing the DOS vs. energy. The expected current/voltage characteristic for each type of junction is included on the right hand side. In each case the Fermi level of metal 1 is raised by e F with respect to metal 2. The dashed lines indicate the characteristics at T>0, and the solid lines indicate the current for T — 0.

High-field transport properties of single wall carbon nanotubes (SWCNT) are analyzed on the basis of phonon-assisted tunneling (PhAT) model. This model enables to explain not only temperature-dependent current-voltage characteristics of SWCNT, but also the crossover from a semiconducting-like temperature dependence conductivity to a metallic-like one as temperature is increased. 

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