High-field transport

Ensemble Monte Carlo (MC) simulations have been the popular tools to investigate the steady-state and transient electron transport in semiconductors theoretically. In particular, the steady-state velocity field characteristics have been determined using the Monte Carlo method for electric field strengths up to 350kVcm in bulk wurtzite structure ZnO at lattice temperatures of 300, 450, and 600 K [158]. The conduction bands ofwurtzite-phase ZnO structure were calculated using FP-LMTO-LDA method. For the MC transport simulations, the lowest F valley (Fi symmetry) and the satellite valleys located at F (F3 symmetry) and at U point, f/rmn (Efi symmetry), which is located two-thirds of the way between the M and L symmetry points on the edge of the Brillouin zone, have been considered. 

Leszczynski, M. (1999) Common crystal structure of the group Ill-nitrides, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (eds J.H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel), EMIS 

Datareviews Series No. 23, INSPEC, The Institution of Electrical Engineers, Stevenage, UK, pp. 3—5, 

2 Ambacher, O., Majewski, J Miskys, C., Link, A., Hermann, M Eickhoff, M Stutzmann, M., Bemardini, E  

Fiorentini, V., Tilak, V., SchafF, B. and Eastman, L.F. (2002) Pyroelectric properties of Al(In)GaN/GaN hetero-and quantum well structures. 

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Xue Y, Ratner MA (2003) Microscopic study of electrical transport through individual molecules with metallic contacts. I. Band lineup, voltage drop, and high-field transport. Phys Rev B 68 115406-115418... 

High-Field Transport in Semiconductor Superlattices By K. Leo 2003. 164 figs.,XIV, 240 pages... 

High-field transport properties of single wall carbon nanotubes (SWCNT) are analyzed on the basis of phonon-assisted tunneling (PhAT) model. This model enables to explain not only temperature-dependent current-voltage characteristics of SWCNT, but also the crossover from a semiconducting-like temperature dependence conductivity to a metallic-like one as temperature is increased. 

E. M.Conwell High Field Transport in Semiconductors, Solid State Physics Supplement 9 (Academic Press, New York, London 1967)... 

Transport through Individual Molecules with Metallic Contacts. I. Band Lineup, Voltage Drop, and High-Field Transport. 

DK Ferry. High-field transport in wide-band-gap semiconductors. Phys Rev B12 2361, 1975. 

Besides its temperature dependence, hopping transport is also characterized by an electric field-dependent mobility. This dependence becomes measurable at high field (namely, for a field in excess of ca. 10d V/cm). Such a behavior was first reported in 1970 in polyvinylcarbazole (PVK) [48. The phenomenon was explained through a Poole-ITenkel mechanism [49], in which the Coulomb potential near a charged localized level is modified by the applied field in such a way that the tunnel transfer rale between sites increases. The general dependence of the mobility is then given by Eq. (14.69)... 

Yao, Z. Kane, C. L. Dekker, C. 2000. High-field electrical transport in single-wall carbon nanotubes. Phys. Rev. Lett. 84 2941-2944. 

N. K. Dutta, Radiative Transitions in GaAs and Other III-V Compounds R. K. Ahrenkiel, Minority-Carrier Lifetime in III-V Semiconductors T. Furuta, High Field Minority Electron Transport in p-GaAs M. S. Lundstrom, Minority-Carrier Transport in III-V Semiconductors R A. Abram, Elfects of Heavy Doping and High Excitation on the Band Structure of GaAs D. Yevick and W. Bardyszewski, An Introduction to Non-Equilibrium Many-Body Analyses of Optical Processes in III-V Semiconductors... 

Javey A, Guo J, Paulsson M et al (2004) High-field quasiballistic transport in short carbon nanotubes. Phys Rev Lett 92 106804... 

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