Tight-binding molecular orbital

Two theoretical approaches for calculating NMR chemical shift of polymers and its application to structural characterization have been described. One is that model molecules such as dimer, trimer, etc., as a local structure of polymer chains, are in the calculation by combining quantum chemistry and statistical mechanics. This approach has been applied to polymer systems in the solution, amorphous and solid states. Another approach is to employ the tight-binding molecular orbital theory to describe the NMR chemical shift and electronic structure of infinite polymer chains with periodic structure. This approach has been applied to polymer systems in the solid state. These approaches have been successfully applied to structural characterization of polymers... 

Sometimes the estimation of the electronic structures of polymer chains necessitates the inclusion of long-range interactions and intermolecular interactions in the chemical shift calculations. To do so, it is necessary to use a sophisticated theoretical method which can take account of the characteristics of polymers. In this context, the tight-binding molecular orbital(TB MO) theory from the field of solid state physics is used, in the same sense in which it is employed in the LCAO approximation in molecular quantum chemistry to describe the electronic structures of infinite polymers with a periodical structure -11,36). In a polymer chain with linearly bonded monomer units, the potential energy if an electron varies periodically along the chain. In such a system, the wave function vj/ (k) for electrons at a position r can be obtained from Bloch s theorem as follows(36,37) ... 

Canonical transformations from the tight-binding (atomic orbitals) representation to the eigenstate (molecular orbitals) representation play an important role, and we consider it in detail. Assume, that we find two unitary matrices SR and SR, such that the Hamiltonians of the left part Hi and of the right part Hi can be diagonalized by the canonical transformations... 

S. Goedecker and M. Teter Tight-binding electronic-structure calculations and tight-binding molecular dynamics with localized orbitals, Phys. Rev. R 51, 9455-9464 (1995). 

In summary, using tight-binding molecular dynamics simulations, we have demonstrated qu ilitative differences in the physical properties of carbon nanotubes and graphitic carbon. Furthermore, we have presented an efficient Green s function formalism for calculating the quantum conductance of SWCNs. Our work reveals that use of full orbital basis set is necessary for realistic ceilculations of quantum conductance of carbon nanotubes. Rirthermore, our approach allows us to use the same Hamiltonian to ceilculate quantum conductivity as well as to perform structural relaxation. 

Calculations and Tight-binding Molecular Dynamics with Localized Orbitals. 

Fig. 5. (a) Schematic illustration of orbitals in the bond-center configuration. X and Y are the semiconductor atoms, (b) Corresponding energy levels obtained from simple molecular-bonding (or tight-binding) arguments for an elemental semiconductor... 

ANG AO ATA BF CB CF CNDO CPA DBA DOS FL GF HFA LDOS LMTO MO NN TBA VB VCA WSL Anderson-Newns-Grimley atomic orbital average t-matrix approximation Bessel function conduction band continued fraction complete neglect of differential overlap coherent-potential approximation disordered binary alloy density of states Fermi level Green function Flartree-Fock approximation local density of states linear muffin-tin orbital molecular orbital nearest neighbour tight-binding approximation valence band virtual crystal approximation Wannier-Stark ladder... 

Chapter 2 introduces the band theory of solids. The main approach is via the tight binding model, seen as an extension of the molecular orbital theory familiar to chemists. Physicists more often develop the band model via the free electron theory, which is included here for completeness. This chapter also discusses electronic condnctivity in solids and in particular properties and applications of semiconductors. 

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