The IEEE 1620 standard

Device measurement can be performed after the device is held at a fixed bias for some time this will expose the direction and nature of the hysteresis. The IEEE 1620 standard recommends 10 minutes at Vos = Vds = OH. Holding the device at a high bias before measurement can also be used to measure the complementary effect. 

The selection of tests used to characterize a device needs to be motivated by the end application of the transistors in question. There are, however, some general guidelines which can guide the structure of test programs. This section makes some recommendations and also includes information on the recommendations of the IEEE 1620 standard. 

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