Temperature insensitivity

R. D. Anderson and R. T. Puhalla, "Parametric Study of Temperature Insensitivity of Ball Propellants," in Proceedings of the 26th JANNAF Combustion Meeting Vol. 3, CPIA Pubhcation 529, CPIA, Johns Hopkins Urdversity, Laurel, Md., Oct. 1989. 

Wei, T. Han, Y. Li, Y. Tsai, H. L. Xiao, H., Temperature insensitive miniaturized fiber inline Fabry Perot interferometer for highly sensitive refractive index measurement, Opt. Express 2008, 16, 5764 5769... 

Reactions with high activation energies are very temperature-sensitive reactions with low activation energies are relatively temperature-insensitive. 

The yield of strand breaks appears to be relatively independent of sample irradiation temperature, as discussed above. This implies that competing processes do not have much impact on reactions 1,2, 5, and 8. That is, the competitions between holes tunneling from the solvent to DNA and deprotonation of HsO " and between hole tunneling form the sugar phosphate to the bases and deprotonation of the sugar are fairly temperature-insensitive (from 4 to 300 K). In contrast, the mobility of the holes and excess electrons centered on the bases is very temperature-sensitive, zero at 4 K, onset at —40 K, and highly mobile at 180 K. By our model, the mobility is controlled by the proton transfer... 

Kimieda H, Solans C (1997) How to prepare microemulsions Temperature-insensitive microemulsions. In Kunieda H, Solans C (eds) Industrial Applications of Microemulsions. Marcel Dekker, New York... 

Temperature Mechanochemical degradation of polyamide by vibromilling exhibited a negative temperature coefficient. The grafting yield should thus increase on decreasing temperature. In fact, the reaction is temperature insensitive. From 10 to 40° C, only a modest decrease of grafting yield was observed. Homopolymerization is almost unaffected by temperature (see Fig. 6). 

These observations suggest that the heterogeneous effect in the S02-modenite system represents an extreme case, so much so that chemisorp-tive bonds may be stipulated (probably between the S02 and the cations). These effects would, of course, involve energy emission and show up in the calorimetric measurements. However, the specificity of the adsorption would tend to show a relatively temperature-insensitive isotherm in the low-pressure region, thus rendering the isosteric techniques of obtaining heats of adsorption/chemisorption ineffective. 

The transition metal carbides do have a notable drawback relative to engineering applications low ductility at room temperature. Below 1070 K, these materials fail in a brittle manner, while above this temperature they become ductile and deform plastically on multiple slip systems much like fee (face-centered-cubic) metals. This transition from brittle to ductile behavior is analogous to that of bee (body-centered-cubic) metals such as iron, and arises from the combination of the bee metals strongly temperature-dependent yield stress (oy) and relatively temperature-insensitive fracture stress.1 Brittle fracture is promoted below the ductile-to-brittle transition temperature because the stress required to fracture is lower than that required to move dislocations, oy. The opposite is true, however, above the transition temperature. 

Hazen KH, Arnold MA, Small GW. Temperature insensitive near infrared measurements of glucose in aqueous matrices. Applied Spectroscopy 1994, 48, All 483. 

P and I are shown as functions of U in Fig. 4.16 and R is shown as a function of U in Fig. 4.17. The curves represent equilibrium conditions, and it is evident that no equilibrium can exist above a certain maintained maximum voltage. If a higher maintained voltage is applied, the current will go on rising indefinitely until the accompanying high temperature destroys the unit. In practice there must always be a temperature-insensitive resistor in series with a thermistor if sufficient power to raise its temperature appreciably is to be applied. 

It is ironic to consider the III-V nitrides, the premier materials for short wavelength blue and UV emitters, as sources of infrared light. However, Er-doped GaN is of interest for making electrically pumped, temperature insensitive, broad band and compact optical amplifiers or sources of 1.54 pm light. Applications include long-haul communication systems (amplifiers), local area networks (50/50 splitters) and sources (lasers) for transmission in silica-based optical fibres. 

On the other hand, the luminescence decay time for a-Sio.2Co.8 H has been found to be about 200 nsec (Nakazawa et al., 1983), much shorter than that of a-Si H, which ranges from 1 //sec to 1 msec (Kurita et al., 1979). This observation is consistent with the temperature-insensitive and efficient radiative transition in C-rich a-Si C rH, in which excited electrons and holes are more tightly bound at the excited position and in the deeper band-tail states than in a-Si H (Nakazawa et al., 1983). Regardless of the reason, the fast decay time in a-Si C H is also attractive for achieving fast-response light-emitting devices. 

The beam constants and the size of the supporting wire were chosen to maximize stability and temperature insensitivity. The wire size was chosen so as to make its torsional contribution a small fraction of the resisting moment of the beam. This tends to make the balance less sensitive to temperature effects. 

Further evidence for pore transport is presented by Yoshida and Roberts [62] in terms of the temperature dependence of iontophoretic flux for solutes of differing size. They showed that the iontophoretic flux for sodium (MW = 23) and cyclosporin (MW = 1203) were relatively temperature insensitive (Fig. 3). The activation energies for iontophoretic transport are similar to activation energies observed for differences of solutes in aqueous solution and indicate that the iontophoretic transport of both solutes is through the pores [62]. 

The break-point temperature in dehydration (above which the rate was temperature insensitive) matched the maximum temperature for dehydrogenation, suggesting that a common intermediate exists for each reaction, and that the product selectivity is determined by interactions with other molecules and the surface. Above 650 K, the catalytic dehydration channel dominates, but the rate-determining step changes above 700 K. Below 700 K, the reaction rate is nearly independent of the partial pressure of formic acid (ca. 0.2 order). Above 700 K, the rate of the reaction is essentially independent of temperature, implying that reaction is limited by formic acid adsorption and dissociation thus, above 700 K, the rate becomes first-order with respect to the partial pressure of formic acid. Higher pressures of formic acid over the crystal surface should therefore increase the transition temperature - this behavior was observed by Iwasawa and coworkers, and the turnover frequency for catalytic dehydration approached the collision frequency of formic acid at high... 

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