Temperature dependence impurity

The responsivity and g-r noise may be analyzed to obtain background photon flux and temperature dependence of responsivity, noise, and detectivity. Typically, n > p, and both ate determined by shallow impurity levels. The minority carrier density is the sum of thermal and optical contributions. 

Relatively high (typically 980—1200°C) temperatures are required to decompose spent acids at reasonable burner retention times. Temperatures depend on the type of spent acid. A wide variety of spent acids can be processed in this way, but costs escalate rapidly when the sulfuric acid concentration in spent acid (impurity-free basis) falls below about 75%. A few relatively uncontaminated spent acids can be reused without decomposition by evaporating the excess water in concentrators, or by mixing in fresh sulfuric acid of high concentration. Weak spent acids are frequently concentrated by evaporation prior to decomposition. 

The primary phases all contain impurities. In fact these impurities stabilize the stmctures formed at high temperatures so that decomposition or transformations do not occur during cooling, as occurs with the pure compounds. For example, pure C S exists in at least six polymorphic forms each having a sharply defined temperature range of stability, whereas alite exists in three stabilized forms at room temperature depending on the impurities. Some properties of the more common phases in Portland clinkers are given in Table 2. 

Effect of Thermal History. Many of the impurities present in commercial copper are in concentrations above the soHd solubihty at low (eg, 300°C) temperatures. Other impurities oxidize in oxygen-bearing copper to form stable oxides at lower temperatures. Hence, because the recrystallization kinetics are influenced primarily by solute atoms in the crystal lattice, the recrystallization temperature is extremely dependent on the thermal treatment prior to cold deformation. 

MIM or SIM [82-84] diodes to the PPV/A1 interface provides a good qualitative understanding of the device operation in terms of Schottky diodes for high impurity densities (typically 2> 1017 cm-3) and rigid band diodes for low impurity densities (typically<1017 cm-3). Figure 15-14a and b schematically show the two models for the different impurity concentrations. However, these models do not allow a quantitative description of the open circuit voltage or the spectral resolved photocurrent spectrum. The transport properties of single-layer polymer diodes with asymmetric metal electrodes are well described by the double-carrier current flow equation (Eq. (15.4)) where the holes show a field dependent mobility and the electrons of the holes show a temperature-dependent trap distribution. 

A celebrated derivation of the temperature dependence of the mobility within the hopping model was made by Miller and Abrahams 22. They first evaluated the hopping rate y,y, that is the probability that an electron at site i jumps to site j. Their evaluation was made in the case of a lightly doped semiconductor at a very low temperature. The localized states are shallow impurity levels their energy stands in a narrow range, so that even at low temperatures, an electron at one site can easily find a phonon to jump to the nearest site. The hopping rate is given by... 

An extensive study by Blackman (3) and a recent study by Millikan and White (21) on the vibrational relaxation of 02 are shown in Figure 2. The impurity of Blackman s sample varied from 1-5%, but the bulk impurity was nitrogen. Blackman s data at lower temperatures are significantly different from Millikan and White s values. The latters data have the same temperature dependence as Equation 5 over the... 

Semiconductors have a considerably smaller band gap (e.g. silicon 1.17 eV). Their conductivity, which is zero at low temperatures but increases to appreciable values at higher temperatures, depends greatly on the presence of impurities or, if added advertently, dopants. This makes it possible to manipulate the band gap and tune the properties of semiconductors for applications in electronic devices [C. Kit-tel. Introduction to Solid State Physics (1976), Wiley Sons, New York N. Ashcroft and N.D Mermin, Solid State Physics (1976), Saunder College]. 

AU these features—low values of a, a strong temperature dependence, and the effect of impurities—are reminiscent of the behavior of p- and n-type semiconductors. By analogy, we can consider these compounds as ionic semiconductors with intrinsic or impurity-type conduction. As a rule (although not always), ionic semiconductors have unipolar conduction, due to ions of one sign. Thus, in compounds AgBr, PbCl2, and others, the cation transport number is close to unity. In the mixed oxide ZrOj-nYjOj, pure 0 anion conduction t = 1) is observed. 

The oxide (an intercalated laminar material) is thermally unstable and on rapid heating it will deflagrate at a temperature dependent on the method of preparation. This temperature is lowered by the presence of impurities, and dried samples of iron(III) chloride-impregnated oxide explode on heating. 

Oxime carbamates may explode on heating, after an induction period of very variable length, dependent upon temperature and impurities present. 

The mechanisms of luminescence decay from an optical center are of critical importance. In particular we have to know if there are any processes internal to the center or external to it, which reduce the luminescence efficiency. It is possible to define two decay times, ir, the true radiative decay time which a transition would have in absence of all non-radiative processes, and r, the actual observed decay time, which maybe temperature dependent, as will usually occur when there are internal non-radiative channels, and which may also be specimen dependent, as when there is energy transfer to other impurities in the mineral. The quantum yield may be close to unity if the radiationless decay rate is much smaller than the radiative decay. 

At lower temperatures (T < T,), a exhibits a temperature dependence characteristic of a small activation energy (= 0.03 eV) for excitation of charge carriers from stationary trap sites It is reasonable to suspect that small polarons tend to be trapped at impurity centers at low temperature. 

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