Synthesis of Nanoscale Silicon and Germanium Electrode Materials

3 Synthesis of Nanoscale Silicon and Germanium Electrode Materials 

Schematics ofthe [a] gas-phase ballistic consolidation chamber and (b) bell jar evaporator. 

Amorphous thin films of silicon and germanium were prepared by physical vapor deposition using a bell jar thermal evaporator (Fig. 2.4b]. A charge of elemental material was evaporated under a 

In both cases the electrodes were intentionally made very thin, without binders or conductive additives, so that the intrinsic properties of nanostructured materials could be measured. Electrode substrates were prepared by first roughening the surface of the stainless steel plates (to be used as the spacers in 2016 coin cell) using 400 grit sandpaper. A thin nickel/copper coating ( 100 nm) was then evaporated on the surface and finally, the silicon/germanium was deposited directly onto the metal-coated planar substrate. 

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