Super Lateral Growth

ImJS, Crowder MA, Sposili RS, Leonard JP, Kim HJ, YxmJH, Gupta W, Jin Song H, Cho HS. (1998) Controlled super-lateral growth of Si films for microstructural manipulation and optimization. Phys Stat Sol (a) 166 603-617. 

The explosive growth of semiconductor industry has been fueled by the relentless pursuit for miniaturization of semiconductor devices. The minimal feature sizes or critical dimensions (CDs) of semiconductor devices in mass production have shrunk from 10p,m more than 30 years ago to less than 100 nm in 2005. According to the International Technology Roadmap for Semiconductors, this miniaturization trend is expected to continue unabated with the production of sub-25 nm generations of devices later next decade [1]. The miniaturization of semiconductor devices has made it possible to offer a host of sophisticated devices and equipment, from super computers, personal computers, personal digital assistants, cellular phones to medical devices and household appliances, with ever increasing performance at steadily reduced prices per transistor or bit. 

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