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Submonolayer

These authors doubt that such interactions can be estimated other than empirically without fairly accurate knowledge of the structure in the interfacial region. Sophisticated scattering, surface force, and force microscopy measurements are contributing to this knowledge however, a complete understanding is still a long way off. Even submonolayer amounts of adsorbed species can affect adhesion as found in metals and oxides [74]. [Pg.454]

Potential Theory Approach. Potential theory may be used to treat submonolayer adsorbtion the formal statement is... [Pg.637]

On the other hand, as applied to the submonolayer region, the same comment can be made as for the localized model. That is, the two-dimensional non-ideal-gas equation of state is a perfectly acceptable concept, but one that, in practice, is remarkably difficult to distinguish from the localized adsorption picture. If there can be even a small amount of surface heterogeneity the distinction becomes virtually impossible (see Section XVll-14). Even the cases of phase change are susceptible to explanation on either basis. [Pg.653]

Figure Bl.22.10. Carbon K-edge near-edge x-ray absorption (NEXAFS) speetra as a fiinotion of photon ineidenee angle from a submonolayer of vinyl moieties adsorbed on Ni(lOO) (prepared by dosing 0.2 1 of ethylene on that surfaee at 180 K). Several eleetronie transitions are identified in these speetra, to both the pi (284 and 286 eV) and the sigma (>292 eV) imoeeupied levels of the moleeule. The relative variations in the intensities of those peaks with ineidenee angle ean be easily eonverted into adsorption geometry data the vinyl plane was found in this ease to be at a tilt angle of about 65° from the surfaee [71], Similar geometrieal detenninations using NEXAFS have been earried out for a number of simple adsorbate systems over the past few deeades. Figure Bl.22.10. Carbon K-edge near-edge x-ray absorption (NEXAFS) speetra as a fiinotion of photon ineidenee angle from a submonolayer of vinyl moieties adsorbed on Ni(lOO) (prepared by dosing 0.2 1 of ethylene on that surfaee at 180 K). Several eleetronie transitions are identified in these speetra, to both the pi (284 and 286 eV) and the sigma (>292 eV) imoeeupied levels of the moleeule. The relative variations in the intensities of those peaks with ineidenee angle ean be easily eonverted into adsorption geometry data the vinyl plane was found in this ease to be at a tilt angle of about 65° from the surfaee [71], Similar geometrieal detenninations using NEXAFS have been earried out for a number of simple adsorbate systems over the past few deeades.
Nishihara C and Nozoye H 1995 influence of underpotentiai deposition of copper with submonolayer coverage on hydrogen adsorption at the stepped surfaces Pt(955), Pt(322) and Pt(544) in sulfuric acid solution J. Electroanal. Chem. 396 139-42... [Pg.2756]

However, it is not practical to set the gas temperature in steady state without equally setting the temperature of the surface and bulk phases hounding the gas. Consideration of the response of the system as a vacuum environment can then provide a sufftciendy precise prediction of the pressure P and the surface coverage 9 at temperature Tfor molecules of a known species in a known state on a known surface. For example, an isotherm is estabhshed between the surface of the condensed and the gaseous phases, depending, eg, on the heat of desorption. For submonolayer coverage on a... [Pg.366]

Dj IE, ratio of a crack is held constant but the dimensions approach molecular dimensions, the crack becomes more retentive. At room temperature, gaseous molecules can enter such a crack direcdy and by two-dimensional diffusion processes. The amount of work necessary to remove completely the water from the pores of an artificial 2eohte can be as high as 400 kj/mol (95.6 kcal/mol). The reason is that the water molecule can make up to six H-bond attachments to the walls of a pore when the pore size is only slightly larger. In comparison, the heat of vaporization of bulk water is 42 kJ /mol (10 kcal/mol), and the heat of desorption of submonolayer water molecules on a plane, soHd substrate is up to 59 kJ/mol (14.1 kcal/mol). The heat of desorption appears as a exponential in the equation correlating desorption rate and temperature (see Molecularsieves). [Pg.369]

Ranges from undetectable to < 10 bonds/cc. Submonolayer sometimes... [Pg.32]

Since then, STM has been established as an insttument fot foteftont research in surface physics. Atomic resolution work in ultrahigh vacuum includes studies of metals, semimetals and semiconductors. In particular, ultrahigh-vacuum STM has been used to elucidate the reconstructions that Si, as well as other semiconducting and metallic surfaces undergo when a submonolayer to a few monolayers of metals are adsorbed on the otherwise pristine surface. ... [Pg.86]

This chapter contains articles on six techniques that provide structural information on surfaces, interfeces, and thin films. They use X rays (X-ray diffraction, XRD, and Extended X-ray Absorption Fine-Structure, EXAFS), electrons (Low-Energy Electron Diffraction, LEED, and Reflection High-Energy Electron Diffraction, RHEED), or X rays in and electrons out (Surfece Extended X-ray Absorption Fine Structure, SEXAFS, and X-ray Photoelectron Diffraction, XPD). In their usual form, XRD and EXAFS are bulk methods, since X rays probe many microns deep, whereas the other techniques are surfece sensitive. There are, however, ways to make XRD and EXAFS much more surfece sensitive. For EXAFS this converts the technique into SEXAFS, which can have submonolayer sensitivity. [Pg.193]

Surface phase transformations and surfrice chemical reactions are followed by studying the time evolution of superlattice beams originating from monolayer or submonolayer films. See, for example. Chapters 8-10 in Low-EnergyYaj Hove et al. op cit.). [Pg.277]

Later it was found that the polluting lubricant droplets originating from the transport belts used in the production they had fallen into the paint bath and prevented adhesion of the paint to the metal. It can be concluded that the high sensitivity of SSIMS in the detection of submonolayer coverage of organic species makes it an extremely powerful tool for solving such interface problems. [Pg.98]

Graphite was tised as substrate for the deposition of carbon vapor. Prior to the tube and cone studies, this substrate was studied by us carefully by STM because it may exhibit anomalotis behavior w ith unusual periodic surface structures[9,10]. In particular, the cluster-substrate interaction w as investigated IJ. At low submonolayer coverages, small clusters and islands are observed. These tend to have linear struc-tures[12j. Much higher coverages are required for the synthesis of nanotubes and nanocones. In addition, the carbon vapor has to be very hot, typically >3000°C. We note that the production of nanotubes by arc discharge occurs also at an intense heat (of the plasma in the arc) of >3000°C. [Pg.65]

Most microscopic theories of adsorption and desorption are based on the lattice gas model. One assumes that the surface of a sohd can be divided into two-dimensional cells, labelled i, for which one introduces microscopic variables Hi = 1 or 0, depending on whether cell i is occupied by an adsorbed gas particle or not. (The connection with magnetic systems is made by a transformation to spin variables cr, = 2n, — 1.) In its simplest form a lattice gas model is restricted to the submonolayer regime and to gas-solid systems in which the surface structure and the adsorption sites do not change as a function of coverage. To introduce the dynamics of the system one writes down a model Hamiltonian which, for the simplest system of a one-component adsorbate with one adsorption site per unit cell, is... [Pg.443]

K. Asakura, J. Lanterbach, H.H. Rothermund, and G. Ertl, Spatio-temporal pattern formation during catalytic CO oxidation on a Pt(100) surface modified with submonolayers of Au, Surf. Sci. 374, 125-141 (1997). [Pg.277]

It has been observed that the H-Si(lll) and H -Si(lOO) surfaces develop a submonolayer oxide when exposed to an average sitting time of 1 h prior to gate oxidation in typical room air and room lighting conditions. Furthermore, the oxidation of the H-Si(lll) and H3.-Si(100) surfaces occurs when they are exposed to UV light in the presence of dry air or humid air. Analogous experiments are reported for the photo-oxidation of pSi. ... [Pg.173]


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See also in sourсe #XX -- [ Pg.98 , Pg.137 ]

See also in sourсe #XX -- [ Pg.130 ]

See also in sourсe #XX -- [ Pg.124 ]




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