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Standard gaseous electron level

Fig. 2-35. Localized electron levels of gaseous redox particles, Fe /Fe I = ionization energy of Fe A = electron affinity of Fe (STO) = standard gaseous electrons tsro = standard gaseous electron level (reference zero level). Fig. 2-35. Localized electron levels of gaseous redox particles, Fe /Fe I = ionization energy of Fe A = electron affinity of Fe (STO) = standard gaseous electrons tsro = standard gaseous electron level (reference zero level).
Figure 2-36 shows the occupied electron level (donor level) of reductant Fe ,, ) and the vacant electron level (acceptor level) of oxidant FeJ,) referred to the standard gaseous electron level at the outer potential of aqueous solution. [Pg.48]

Fig. 2-36. Electron energy levels in hydrated oxidant Fe and reduc-tantFe AG = energy to organize hydrate structures dGj t = energy required for dehydrated redox ions to donate or accept gaseous electrons ep.2> o = most probable electron donor level of Fe Spe +.A = most probable electron acceptor level of Fe Hj05,2.,p,j = hydrated structures cgn) = standard gaseous electron level (s 0). Fig. 2-36. Electron energy levels in hydrated oxidant Fe and reduc-tantFe AG = energy to organize hydrate structures dGj t = energy required for dehydrated redox ions to donate or accept gaseous electrons ep.2> o = most probable electron donor level of Fe Spe +.A = most probable electron acceptor level of Fe Hj05,2.,p,j = hydrated structures cgn) = standard gaseous electron level (s 0).
Fig. 2-44. Energy balance and electron energy levels in the normal hydrogen electrode reaction Ch- = standard gaseous proton level Estd = standard gaseous electron level. Fig. 2-44. Energy balance and electron energy levels in the normal hydrogen electrode reaction Ch- = standard gaseous proton level Estd = standard gaseous electron level.
The electron level in hydrated redox particles consists of the energy AGmt (< 0) required for the standard gaseous electron to combine with or to be released from the gaseous redox partides and the energy AG ,(>0) required for the redox particles to form their hydrate structures. Since the donor and acceptor levels of gaseous redox particles Pefi j/Fe, equal each other, the difference between the... [Pg.48]

Taking the standard gaseous electron e(sn ) as the reference electron at the zero level, we write the reaction in Eqn. 2-56 ... [Pg.56]

Fig. 4-12. Electron energy levels in electron transfer from a standard gaseous electron throu an electrol3rte solution into an electrode a,(M/sn)) = real potential of electron in electrode E = electrode potential (absolute electrode potential). Fig. 4-12. Electron energy levels in electron transfer from a standard gaseous electron throu an electrol3rte solution into an electrode a,(M/sn)) = real potential of electron in electrode E = electrode potential (absolute electrode potential).
In electrochemistry, the electrode potential is defined by the electronic energy level in a solid electrode referred to the energy level of the standard gaseous electron just outside the surface of an electrolyte (aqueous solution) in which the electrode is immersed [6] ... [Pg.540]

In electrochemistry, we deal with the energy level of charged particles such as electrons and ions in condensed phases. The electrochemical potential, Pi,of a charged particle i in a condensed phase is defined by the differential work done for the charged particle to transfer from the standard reference level (e.g. the standard gaseous state) at infinity = 0) to the interior of the condensed phase. The electrochemical potential may be conventionally divided into two terms the chemical potential Pi and the electrostatic energy Zi e as shown in Eqn. 1-21 ... [Pg.11]

The unitary level of the surface ion referred to the standard gaseous ion S sTD) at the outer potential of the semiconductor is represented by the unitary real potential, Ug. (= - 7s). This unitary real potential is equivalent to the sum of the standard free enthalpy AG of sublimation of the semiconductor, the ionization energy Is of the gaseous atom S, and the electron energy sy at the upper edge level of the valence band as shown in Eqn. 3-14 ... [Pg.68]

Fig. 4-10. Electron energy levels in (a) an isolated solid metal and in (b) a metal electrode immersed in an electrolyte solution M = metal S = electrolyte solution e(STD) = gaseous electrons in the standard state e Fig. 4-10. Electron energy levels in (a) an isolated solid metal and in (b) a metal electrode immersed in an electrolyte solution M = metal S = electrolyte solution e(STD) = gaseous electrons in the standard state e<M) = electrons in metal = outer potential of an isolated solid metal = outer potential of electrolyte solution.
Figures 4-11 and 4-12 show schematic energy diagrams for the electron transfer from the standard gaseous state through the electrolyte solution into the metal electrode. As mentioned in Chap. 2, the electron level (the real potential of electron) a s/v> in an electrolyte solution consists of an electrostatic energy... Figures 4-11 and 4-12 show schematic energy diagrams for the electron transfer from the standard gaseous state through the electrolyte solution into the metal electrode. As mentioned in Chap. 2, the electron level (the real potential of electron) a s/v> in an electrolyte solution consists of an electrostatic energy...
In this simple technique, the metal to be determined, in the form of a solution of a suitable compound, is sprayed into a flame. As in atomic absorption, when the solvent evaporates in the flame, the solid obtained is atomised and a gaseous metal ion is excited to a higher electronic level. When this drops to a lower level, a line spectrum is emitted and its intensity is measured. Flame photometers rely on the use of filters to isolate the line emitted, which is detected by a photocell and its output is measured by a calibrated galvanometer. The method is applicable to 16 metals. Reliable results are only obtainable by careful control of the experimental conditions. These depend on temperature (i.e. the type and rate of flow of the flammable gas and the oxidant which is usually air), the rate of flow of the solution to the flame as well as the compound tested and solvent used. A method used to minimise the effects of these variables is to add a known constant amount of an internal standard of a compound of a metal other than the metal to be determined but with similar excitation characteristics. Ihe ratio of the intensities of the standard and the test sample is determined. A calibration plot of the logarithm of the intensity ratio and the logarithm of the concentration of the test element is drawn. The concentration of an unknown is found by interpolation of the calibration plot. Alternatively, the standard additions method as in Sec.2.4.3 is used. In all cases, allowance should be made for any dilution effects. [Pg.29]

Fig. 2-43. Energy balance in the reaction of normal hydrogen electrode H2(sid.p>j = hydrogen molecule in the gaseous standard state (at 1 atm) H( gro. i) = hydrated proton of unit activity = real potential of the hydrated proton of unit activity a.ajHE) = real potential of the equilibrium electron of NHE (= Fermi level cpcnhe) of NHE). Fig. 2-43. Energy balance in the reaction of normal hydrogen electrode H2(sid.p>j = hydrogen molecule in the gaseous standard state (at 1 atm) H( gro. i) = hydrated proton of unit activity = real potential of the hydrated proton of unit activity a.ajHE) = real potential of the equilibrium electron of NHE (= Fermi level cpcnhe) of NHE).
The critical applications in the electronics industry are the production of ultra-pure water for the washing of semi-conductor material (silicon chips), and the cleaning of the chemical fluids (liquid and gaseous) used in their manufacture. The object of an ultra-pure water plant for semi-conductor manufacture is to produce water as close to the theoretical purity as possible. Users of ultra-pure water should take all steps possible to ensure that the filters selected meet the highest standards of quality and performance. Every fluid that comes into contact with integrated circuit surfaces is a potential sonrce of the contamination that will affect yields. For this reason, filtration of these fluids at the point of use is essential to obtain high yields. All chemicals that contact microcircuits should be filtered to a level of at least 0.2 pm. [Pg.250]


See other pages where Standard gaseous electron level is mentioned: [Pg.9]    [Pg.395]    [Pg.9]    [Pg.395]    [Pg.86]    [Pg.541]    [Pg.56]    [Pg.86]    [Pg.97]    [Pg.575]    [Pg.28]    [Pg.107]    [Pg.367]    [Pg.28]    [Pg.385]    [Pg.82]    [Pg.29]    [Pg.237]    [Pg.97]    [Pg.219]    [Pg.502]    [Pg.554]    [Pg.292]    [Pg.489]   
See also in sourсe #XX -- [ Pg.9 , Pg.48 ]




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