Sputtering metallization process

Figure 1.7 depicts a typical sputtering metallization process. This metallization technique is also called "conventional thin film," "wet-etching," or a "subtractive" process. It is the most widely used technique for via metallization and interconnect formation because of the simplicity of the process. 

Figure 6.6 The HCL process, where Ar" is a positively charged argon ion, M is a sputtered ground state metal atom, M is an excited state metal atom, and A is emitted radiation at a wavelength characteristic for the sputtered metal. [From Beaty and Kerber, used with permission of PerkinElmer, Inc., (www.perkinelmer.com).]...

Schematic illustration of the sputtering/metallic deposition process. 

Most other metal films are deposited by physical vapor deposition, usually evaporation or sputtering. Both processes require a high vacuum and are relatively expensive. Sputtering is the most expensive method, but it allows a much better control of the film composition. As a result of mechanization of physical vapor deposition, the deposition price of metal films is now so low that application for general purpose resistors is possible. 

The metallization process required five steps. First, Ni thin film was sputtered on the surface of the triangular reflowed structure (Figure 4.25a). The Ni would then serve as the seed layer for the subsequent Ni-Co electroplating in the second step to form the Ni-Co mold (Figure 4.25b). The completed Ni-Co mold serves as the primary master mold. 

Composite films of Ceo fullerenes and silver, aluminum, and copper were obtained by Hou et al. [113] the procedure entailed evaporating fullerenes prepared by the arc process and sputtering metal onto their condensate. 

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