Sputter depth profiling

Fig. 18. Ideal and real sputter-depth profiles for thin film of A and substrate B.

Fig. 2.27. AES sputter-depth profiles of the 0 -Al2O3-Ti thin-film structure on a smooth Si substrate covered with a TIN thin-film diffusion barrier, (A) as-deposited, (B) after heating to 500 °C, (C) after heating to 580 °C [2.147],...

Compared with XPS and AES sputter depth profiling After achieving sputter equilibrium, and until a layer with different sputtering behavior is reached [3.59], the SN flux represents stoichiometry and not altered layer concentrations evolving because of preferential sputtering effects. 

Fig. 3.39. HF-plasma SNMS sputter depth profiles (DBM) ofTi-48AI-2Cr (atom%) samples having been oxidized at 800 °C in air for (a) less than 4 s,...

Fig. 12. Auger electron spectroscopy (AES) sputter-depth profile of CAA-treated titanium after various exposure.s in vacuum (a) as anodized, (b) 450°C for 1 h, and (c) 7(X)°C for 1 h. The sputter etch rate is 1.5 nm/min. The line indicates the original interface. The arrow denotes oxygen diffused into the substrate. Adapted from Ref. [51].

Spurted fibers, 11 240—241 Sputter deposition, 23 7, 24 728-736 advantages and disadvantages of, 24 736 Sputter depth profiling, 24 98-100 Sputtered gold coatings, 12 693 Sputtered neutral mass spectrometry (SNMS), 24 108... 

The characterization of the surface chemistry of the modified polymer is one step in understanding the mechanism for cells adhesion. The next crucial step is to determine the nature and extent of chemical interactions between the overlayer of interest and the modified polymer surface. This step presents a challenge because cmrently there are no techniques available with the sensitivity to characterize chemical interactions for an atomically thin buried interface. Several approaches have been used to analyze buried interfaces. Ion sputter depth profiling (typically done with Ar ions) in conjunction with XPS can be used to evaluate a buried interface for overlayers >10 nm [2]. 

The two instruments most suited to the sputter depth profiling of individual particles are the Auger and ion microprobes. The characterization of automobile exhaust particles produced in the combustion of leaded gasoline will be used to illustrate this point. 

Figure 10. Sputter depth profile of oxide formed at 10 3 Pa oxygen pressures (top)...

Fig. 3.29 Auger sputter depth profile of a layered Zr02/SiC>2/Si model catalyst. While the sample is continuously bombarded with argon ions which remove the outer layers of the sample, the Auger signals of Zr, O, Si and C are measured as a function of time. The depth profile is a plot of Auger peak intensities against sputter time. The profile indicates that the outer layer of the model...

Fig. 28. Composition of passive layers on Fel5Cr from ISS sputter depth profiles formed (a) in 0.5 M H2SO4 at 0.90 V as a function of time.

Fig. 32b. Composition of passive layers on Fe/Al alloys from ISS sputter depth profiles formed in phthalate buffer pH 5.0 at E = 1.0 V for 300 s [76],...

Fig. 7.17. SNMS isotope intensity sputter depth profiles of ZnO films grown at 650° C without (top) and with (bottom) Ce02 buffer layer. The buffer layer with a thickness of about 50 nm reduces the interdiffusion of A1 and Zn into ZnO and sapphire, respectively, and thereby the concentration of n-type carriers in the ZnO film...

Kirschner J, Koike K, Oepen HP (1987) Spin polarization of ion-excited secondary electrons from ferromagnets and its application for magnetic sputter depth profiling. Phys Rev Lett 59 2099... 

The surface of the primers opposing the alloy panels was found to have the full TMS film still strongly adhered to the primer, with the HFE film within the TMS/primer interface. Figure 10.11 shows the elemental sputter depth profile from... 

Figure 10.11 (Top Panel) Elemental area plot from XPS sputter depth profile of interface side of lifted primer on one failed sample (Bottom Panel) Summary Si/C ratio information from depth profiles of the interface side of the primers lifted from three failed panels.

Figure 32.19 shows C/Si ratios formed from the XPS sputter depth profiles of the TMS plasma polymers with and without additional plasma treatment. As deposited, without a second plasma treatment, the closed system TMS plasma film has a surface that is carbon rich (with a C/Si ratio of about 4.7) and low oxygen content (with an O/Si ratio of about 0.7). From Figure 32.19a, it is observed that the as-deposited TMS plasma film shows a gradual structure change from the surface with more carbon (C/Si ratio of about 4.7) to lower carbon (C/Si ratio of about 1.7) in the bulk film. This also manifests itself as a higher C/Si ratio at the surface than the bulk value, which is unique to this film. 

Sputter depth profiles combine analysis with sputtering... 

Figure 9. AES sputter depth profile from a void in a Au film plated on Pd. Sputter rate = 600A/minute.

Figure 12. AES sputter depth profiles of printed circuit boards showing the distribution of Cu in Au/Ni/Cu bonding pads with "good" and "bad" bonding.

Formation of T1 silicide requires annealing be done In an oxygen free atmosphere or formation of T1 oxide will dominate formation of the silicide. Displayed In Figure 14 Is a sputter depth profile of Tl/Sl that was annealed In forming gas, 80%... 

H- and 20% N2. In the profile there Is no evidence of diffusion of SI Into the Tl. There was enough oxygen In the furnace tube to prevent any formation of a silicide. Following annealing In a vacuum environment a silicide was formed as shown by the sputter depth profile In Figure 14. A result similar to that of the forming gas case would occur If annealing was done under poor vacuum conditions. 

Pt silicide will not form if there Is a native oxide on the surface of the SI prior to deposition of Pt. The lack of any diffusion of Ft Into the SI Is Illustrated In the sputter depth profile shown In Figure 15. Note the presence of the oxygen at the Pt/Sl Interface. Pt Is not able to diffuse through the oxide layer on the surface of the SI. 

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