Sputter deposition compounds

This first systematic XPS analysis has shown that it is possible to sputter-deposit compounds whose surface properties (fluorine to carbon ratio, cross-linking and branching) can be varied over a large range of values, as it has already been observed for polymer films prepared by plasma polymerization. We note here that a film very similar to polytetrafluoroethylene... 

This paper consists of three parts. The first part describes the high pressure synthesis of bimetallic compounds of NbN and MN where M is a Group 13 metal such as Al, Ga, or In. The second part discusses crystal structure investigations of a series of alkaline earth and transition metal nitrides, carried out to understand the bonding surrounding the transition metals. The third part describes the preparation of new metastable transition metal nitride and their solid solutions by rf-sputter deposition. 

Reactive sputter deposition is a useful technique not only for coating but also for obtaining metastable phases, especially nitrides. Nitrogen gas is activated in a plasma to enhance nitride formation and heating at high temperature is not required. It is possible to obtain metastable nitrides by sputter deposition in which species in the plasma are quenched on substrates. Compounds with different crystal structures normally do not form solid solutions, but by co-sputter deposition metastable solid solutions may form. 

The precursor used to create the 3-APTHS solutions was 3-aminopropyl-triethoxysilane (3-APTES). Commercial 3-APTES obtained from Huls Petrarch Systems Inc. was twice vacuum-distilled. Individual ampules were filled with the distilled precursor and sealed for later use. Triply-distilled HPLC grade water was used to prepare the 3-APTHS solutions used for sample treatment. For isotopically labelled 3-APTHS studies, we used 99 atom % 15N labelled 3-APTES, and 97.8 atom % l80 labelled water. Both compounds were obtained from MSD Isotopes [12]. The substrates used were polished Si wafers 1.5 cm in diameter. The Cr was sputter-deposited to a thickness of 1000 A onto one half of the Si wafer so that both the Si and Cr surfaces had identical preparation histories up to and including the analysis for every sample prepared. 

The CdS/ZnO interface is of particular importance in Cu(In,Ga)Se2 thin film solar cells because it is used in the standard cell configuration (Fig. 4.2). A first experimental determination of the band alignment at the ZnO/CdS interface has been performed by Ruckh et al. [102]. The authors have used ex-situ sputter-deposited ZnO films as substrates. The interface formation was investigated by stepwise evaporation of the CdS compound from an effusion cell. Photoelectron spectroscopy revealed a valence band offset of A Vb = 1.2eV. An identical value of 1.18eV has been derived using first-principles calculations [103]. With the bulk band gaps of CdS and ZnO of 2.4 and... 

The flush of speed affected substantially the HTE community during the first years. Speed is still an issue of concern. Pioneering technologies like thin film deposition by sputtering of compounds using masks has been developed by Hanak [3] and brought to perfection by Symyx [4]. Additiomlly, other film deposition methods have been adapted to caMyst syntheses like thermal and... 

The kinetics of reactive sputter deposition, especially for deposition with a metal target and a metal compound film, is described in a model developed by Berg et al. (1989). The model is based on the balance of the compound covered fraction (0t) of the total target area ( tar) during the reactive sputter deposition. 

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