Spin-on glass films

Another work reported the immobilization of nueleie aeids on CNTs previously opened by oxidative treatment and proteeted by a spin-on-glass film [69]. Once the carboxyl residues were obtained they were activated with EDC and NHS and the nucleic acids were immobilized (Scheme 3). The hybridization event in this case was evaluated by using a peptide nucleic acid sequence as probe and a target containing a fluorescent residue. 

Characterization of Spin-On Glass Films as a Planarizing Dielectric... 

Figure 6. Auger depth profile of hsX thick spin-on glass film.

The Fe was diffused, from a spin-on glass film, onto n-type wafers at 700 to 900C. The diffusivities, as determined using junction-depth and conductivity techniques, could be explained in tenns of a model which assumed the existence of exhaustible diffusion sources. It was found that the diffusivity was described by ... 

Lin J, Heurich M, Obermeier E (1993) Manufacture and examination of various spin-on glass films with respect to their humidity-sensitive properties. Sens Actuators B 13(14) 104—106 Liu YJ, Shi J, Zhang F, Liang H, Xu J, Lakhtakia A, Fonash SJ, Hueuig TJ (2011) High-speed optical humidity sensors based on chiral sculptured thin films. Sens Actuators B 156 593-598 Mai LH, Hoa PTM, Binh NT, Ha NTT, An DK (2(XX)) Some investigation results of the instability of humidity sensors based on alumina and porous silicon materials. Sens Actuators B 66 63-65 Masuda H, Nishio K, Baba N (1993) Fabrication of a one-dimensional microhole array by anodic oxidation of aluminium. Appl Phys Lett 63 3155-3157... 

Spin-On Glass. In microelectronic appHcations, films of siHcon dioxide are deposited on siHcon substrates by the appHcation of a partially hydroly2ed solution of tetraethoxysilane or methyltriethoxysilane (59,60). A product based on this technology is marketed under the name Accuspin by AHiedSignal. 

A recent competitor to CVD in the planarization of silicon dioxide is the sol-gel process, where tetraethylorthosilicate is used to form spin-on-glass (SOG) films (see Appendix). This technique produces films with good dielectric properties and resistance to cracking. Gas-phase precipitation, which sometimes is a problem with CVD, is eliminated. 

Includes Chemical (oxidefilms) and Physical (like "spin-on glass or metallization films)... 

Sol-gel-derived films can also serve to provide protective coverings, flat outer layers for microrough surfaces, or thin dielectric layers. Spin-on glasses have been developed for all these applications. Some films can change color under an applied EMF (e.g., TiC>2 turns blue at 2 V, while... 

Nakano, T. Tokunaga, K. Ohta, T.J. Effects of Si-C bond content on film properties of organic spin-on glass. Electrochem. Soc. 1995, 142, 1303. 

Substrate planarization is a critical requirement in the fabrication technology of state-of-the-art integrated circuits (ICs). After a brief review of the existing planarization techniques the use of spin-on glass (SOG) films, which have the inherent quality of planarizing underlying topography, as an interlevel dielectric is described. The physical, chemical, and dielectric properties of two SOG materials,... 

Spin-on glass (SOG) films are desirable as an interlevel dielectric because of their inherent ability to planarize underlying topography. Depending upon the film thickness obtainable and the material characteristics, SOG films can be utilized either as a stand-alone interlevel Insulation layer or as a smoothing layer in conjunction with conventional CVD dielectric layers. The various schemes possible with the application of SOG films in interlevel insulation are illustrated in Figure 1. 

The coefficients were deduced from the desorption spectra of water measured in a Si02/spin-on-glass/Si system. The spun-on glass film was used as a water source. 

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