Spectroscopic ellipsometry, porous silicon

Commonly used spectroscopic or analytical techniques for characterizing surfaces and coating layers on porous silicon are Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, energy dispersive X-ray spectrometry, fluorescence spectroscopy, UV-Vis absorption/reflectance spectroscopy, thin film optical interference spectroscopy, impedance spectroscopy, optical microscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, ellipsometry, nitrogen adsorption/desorp-tion analysis, and water contact angle. [Pg.203]

Muller F, Bimer A, Gosele U, Lehmann V, Ottow S, Foil H (2000) Structuring of macroporous silicon for applications as photonic crystals. J Porous Mater 7 201-204 Nassiopoulu AG, Kaltsas G (2000) Porous silicon as an effective material for thermal isolation on bulk crystalline silicon. Phys Stat Solidi (a) 182 307 Nava R, de la More MB, Taguena-Martinez J, del Rio JA (2009) Refractive index contrast in porous silicon multilayers. Phys Stat Solidi C6 1721-1724 Pettersson L, Hultman L, Arwin H (1998) Porosity depth profiling of thin porous silicon layers by variable angle spectroscopic ellipsometry a porosity graded layer model. Appl Optics 37(19) 4130 136... [Pg.453]

Structure of porous silicon (Astrova and Tolmachev 2000). A serial-parallel model for the porosity and oxidation dependence of dielectrics for porous silicon has thus been reported. Predictions agree with experimental results, which enable us to measure the extent of oxidation (Pan et al. 2005). An ab initio quantum mechanical study of the effects of oxidation process in porous silicon using an interconnected supercell structure and its complex refractive index was also reported and compared with experimental data obtained from spectroscopic ellipsometry (Cisneros et al. 2007). [Pg.803]

Parratt LG (1954) Surface studies of solids by total reflection of X-rays. Phys Rev 95 359 Pettersen LA, Hultman L, Arwin H (1998) Porosity depth profiling of thin porous silicon layers by use of variable angle spectroscopic ellipsometry a porosity graded-layer model. Appl Opt 37 4130... [Pg.893]

Whitby M, Quirke N (2007) Fluid flow in carbon nanotubes and nanopipes. Nat Nanotechnol 2 87 Wongmanerod C, Zangooie S, Arwin H (2001) Determination of pore size distribution and surface area of thin porous silicon layers by spectroscopic ellipsometry. Appl Surf Sci 172 117 Zhang XG (1991) Mechanism of pore formation on n-type silicon. J Electrochem Soc 138 3750... [Pg.893]