Solid-state single crystal growth

Hirota K, Satomi M, Matsuyama K, Kugimiya K (1990) The solid-state single-crystal growth from Mn-Zn ferrite polycrystal with additives. Mater Res Bull 25 1453-1459... 

Lee, H. Y., Solid-state single crystal growth (SSCG) method a cost-effective way of growing piezoelectric single crystals, in Piezoelectric Single Crystals and Their Application, S. Trolier-Mckinstry, L. E. Cross and Y. Yamashita (eds), 160-77, 2004. 

Garrett, J. D., Greedan, J. E., Faggiani, R., Carbotte, S., and Brown, I. D. (1982). Single crystal growth and structure determination of AgigIi2P207. J. Solid State Chem. 42, 183-90. 

Takahashi M, Uematsu K, Ye ZG, Sato M (1998) Single-crystal growth and structure determination of a new oxide apatite, NaLa9(Ge04)602. J Solid State Chem 139 304-309 Terpstra RA, Driessens FCM (1986) Magnesium in tooth enamel and synthetic apatites. Calcif Tissue Inti 39 348-354... 

Precise studies of the structural imperfections in copper single crystals were carried out by F. W. Young, Jr. after he received the Ph.D. degree and joined the Solid State Branch of ORNL. Young developed etchants that brought out the dislocations which intersected the surface. He was thus able to determine the number of imperfections that was present as a consequence of the single crystal growth process and to determine those that were introduced by various mechanical treatments. 

Higuchi M, Masubuchi Y, Nakayama S, Kikkawa S, Kodaira K (2004) Single crystal growth and oxide ion conductivity of apatite-type rare-earth silicates. Solid State Ionics 174 73-80... 

R2O3 + 3Se02 — R2(Se03)3 (solid state) Quartz glass or metal ampoule (Au, Monel) flux (NaCl, LiF, CsBr) needed for single crystal growth T = 500-850°C Formation of side prodncts (halide-selenites) possible if flux is used at lower temperamres and Se02 exeess the formation of diselenites is observed... 

A number of theories have been put forth to explain the mechanism of polytype formation (30—36), such as the generation of steps by screw dislocations on single-crystal surfaces that could account for the large number of polytypes formed (30,35,36). The growth of crystals via the vapor phase is believed to occur by surface nucleation and ledge movement by face specific reactions (37). The solid-state transformation from one polytype to another is believed to occur by a layer-displacement mechanism (38) caused by nucleation and expansion of stacking faults in close-packed double layers of Si and C. 

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