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SIS , structure

Disacchandes are carbohydrates that yield two monosaccharide molecules on hydroly SIS Structurally disaccharides are glycosides m which the alkoxy group attached to the anomeric carbon is derived from a second sugar molecule... [Pg.1046]

The high level of enantiofacial selection is made in the hydride transfer step 7C -> 7D [2], The chelating geometry in the transition state 7F decreases the activation energy. The chiral environment derived from (R)-BINAP clearly differentiates diastereomeric Si-7F and Re-7F (Fig. 32.7b). The Si structure affording the R alcohol is much more favored than the Re structure, which suffers from the Ph/R repulsion. [Pg.1116]

In the case of 7-AI2O3, the only t/>0/pH measurements in which a ApK is reported are in (18) and (14) (see Figure 6) the value observed is ApK= 4.2, assuming that Ns = 8 x 1014 cm-2. Again, the type of electrolyte did not affect this result. The pHpzc found with electrolyte/insulator/Si structures was 8, which is close to the value of 8.4 usually reported for colloidal dispersions of the same material. Thus, for 7-AI2O3, the following results are obtained ... [Pg.91]

The macroscopic dielectric constant of PS is very sensitive to the frequency range investigated. For very high frequencies the dielectric constant can be obtained by optical measurements. In this regime the effective medium approximation has been found to be an adequate description [Th3]. For lower frequencies the dielectric constant e is commonly obtained by capacitance measurements of metal/PS/ Si structures. AC conductivity measurements of such structures indicate a hop-... [Pg.125]

Si structure 251 smallpox 70 soil nitrogen compounds detected by 15N NMR, amides/peptides 126 amino adds 126 difficulties encountered with the method 126-127... [Pg.292]

Figure 4.13 Top and side view of unreconstructed Si(001) as terminated from the bulk Si structure. Coordinates used for this illustration come from a fully relaxed DFT calculation. Figure 4.13 Top and side view of unreconstructed Si(001) as terminated from the bulk Si structure. Coordinates used for this illustration come from a fully relaxed DFT calculation.
Poborchii, V., Tada, T., and Kanayama, T. 2005. Subwavelength-resolution Raman microscopy of Si structures using metal-particle-topped AFM probe. Jpn. J. Appl. Phys. 44 L202-5. [Pg.270]

Figure 3. Typical rcvcrsc-phasc-type chromatogram of a diastereomer separation of an aminoelhanol, in this case (ft.S)-propranolol, using an (ft.Si-structure homolog as the internal standard and derivatized with (ft.ft)-DATAAN (Table , Entry 25). This example represents an application for the bioanalysis of a betablocking drug (propranolol), but it can also be used for bulk compound analysis for optical purity determinations. Figure 3. Typical rcvcrsc-phasc-type chromatogram of a diastereomer separation of an aminoelhanol, in this case (ft.S)-propranolol, using an (ft.Si-structure homolog as the internal standard and derivatized with (ft.ft)-DATAAN (Table , Entry 25). This example represents an application for the bioanalysis of a betablocking drug (propranolol), but it can also be used for bulk compound analysis for optical purity determinations.
Some siloxanes are detected now. This is concluded from the increase of the peaks at + 147 and +163 amu, both of which contain Si—O—Si structures. [Pg.340]

In 1988, Damrauer and cowerkers found the gas-phase acidity of H2C=Si to he between that of CH3SH and acetophenone, making H2C=Si a stronger acid than acetylene421. It was necessary for these workers to assume the HCSi- structure for the ion that they studied in tandem flowing afterglow selected ion flow tube proton-transfer experiments, as well as the H2C=Si structure for the product. [Pg.2556]

Table 17.12. The point group of the wave vector P(k) at the symmetry pointsK = T, A, and Xfor the InSb and Si structures. [Pg.379]

As may be noted, water vapor speeds up device response to hydrogen. Figure lib gives V-p (where V-pn is the turn on voltage for transport down the channel created by the stored charge) versus time for a MOSFET based on the Pd/Si02/Si structure. These data are for an exposure to 180 ppm H2 in air at 150°C. In this case, both response and recovery behavior are shown. Figure 12 clearly shows that Pd/SiC>2/... [Pg.193]

Fig. 15. Stereo views of the different myosin head, SI, structures showing their variable conformations in different crystal structures. (A) The heads with their motor domains superimposed and oriented as if interacting with a vertical actin filaments in the rigor conformation, Z-band bottom and M-band top. (B) The same structures in a view down the actin filament long axis, looking from the M-band towards the Z-band. Blue is the Dominguez et al. (1998) structure of SI in chicken smooth muscle with ADP.AIF4 bound, orange is the insect flight muscle SI in the ADP.Pj state (Al-Khayat et al., 2003), yellow is scallop SI crystal structure in the ADP.VO4 state (Houdusse et al., 1999), and green is the chicken skeletal muscle with no nucleotide bound (Rayment et al., 1993a). Fig. 15. Stereo views of the different myosin head, SI, structures showing their variable conformations in different crystal structures. (A) The heads with their motor domains superimposed and oriented as if interacting with a vertical actin filaments in the rigor conformation, Z-band bottom and M-band top. (B) The same structures in a view down the actin filament long axis, looking from the M-band towards the Z-band. Blue is the Dominguez et al. (1998) structure of SI in chicken smooth muscle with ADP.AIF4 bound, orange is the insect flight muscle SI in the ADP.Pj state (Al-Khayat et al., 2003), yellow is scallop SI crystal structure in the ADP.VO4 state (Houdusse et al., 1999), and green is the chicken skeletal muscle with no nucleotide bound (Rayment et al., 1993a).
The effect of quantum confinement is also pronouncedly seen in the real parts of the dielectric function. The characteristics versus photon energy behavior for all considered Si and Ge quantum films are presented in Figure 32. One can observe the reduction of the maximum value of ei as well as its value at zero energy (static dielectric constant) when going to the thinner films. The calculated values of the static dielectric constant (ei(0)) for the films considered are considerably smaller than that of bulk material. Moreover, for the same film thickness ei(0) appears to be higher for the Si structures as compared to the Ge ones, despite the fact that for bulk the Ge value is higher than the Si one. Even if, as stated above, the data shown for the dielectric functions are those relative to the supercell calculation, for films of similar width, at least, semi-quantitative comparison is possible, since the ratio between the volume occupied by the isolated layer and the supercell volume is almost constant in these cases. [Pg.260]

Mozharivskyj and Franzen (2000b) investigated the crystal structure of Tb5Pd2Sb, which has the Mosf Si structure type, a = 0.7730, c = 1.3508 by X-ray powder diffraction of arc melted and annealed at 1070 K for 10 days alloy. [Pg.83]

Polymeric compounds with limited Si-Si units in which the polymeric character is due to other bond systems, have been described. Another series of polymeric compounds exists, in which the Si-Si bonds themselves are responsible for the polymeric state. The extreme case, when all four valencies of a silicon atom are bonded with Si atoms, produces metallic silicon with a diamond structure. Compounds of the type (SiX2) or (SiX) result when some valencies of each silicon atom are occupied by other atoms or groups. Only polymeric compounds (SiXj,) withy from 2 to 1 exist SiX3 yields disilanes, and compounds withy between 3 and 2 yield limited chains. The possible stoichiometric compositions SiX2 and SiX are sometimes found, but a non-stoichio-metric composition is more common, which is understandable in view of the irregular framework of the Si-Si structure. The formation of regular or irregular Si-Si structures of stoichiometric or non-stoichiometric composition will depend on the procedures used in preparation. [Pg.101]

Figure 10. The principle of using pre-etched Si substrates (left top) deposited with a multilayer (bottom left). The TEM cross-section image (right) shows how the multilayer covers the Si structure. Figure 10. The principle of using pre-etched Si substrates (left top) deposited with a multilayer (bottom left). The TEM cross-section image (right) shows how the multilayer covers the Si structure.
Although not siloxane based, organosilicon surfactants have also been made from per-methylated carbosilanes containing an Si-C-Si structure. The simplest version of this is the trimethyl silylated alkyl polyether discussed by Klein [22] and Wagner [11, 23]. These surfactants are more hydrolytically stable wetting agents than the trisiloxanes. [Pg.191]

Two main hypotheses about the catalytic behavior of Pd have emerged from studies of Pd/SiO /Si structures. The first one is concerned with a change in the contact potential due to several possible mechanisms (1) formation of a dipole layer by H atoms at the metal-insulator interface... [Pg.217]

Three papers concerned specifically with switching in hydrogenated amorphous silicon by Gabriel and Adler (1982), den Boer (1982), and Owen et al. (1982) appeared almost concurrently early in 1982, each reporting very different effects observed in different a-Si structures. Our own work (Owen et al., 1982), including recent results, is described in detail in the following sections. [Pg.278]


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See also in sourсe #XX -- [ Pg.2 , Pg.486 , Pg.498 ]




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Compositional and Structural Variations in the System Li-Al-Si

Elemental Si surface electronic structur

Si Ge structure

Si surface electronic structur

Si(lll)-(7 x 7) Structure

Structural and Electrical Properties of the Poly-Si Films

Structures of Si-Adamantanes

Surface Structure of Si

The molecular structure of Si

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