SIMOX

Figure 42 l60 3-D images and profiles from separation by implanted oxygen (SIMOX)... 

SIMOX [Separation by IMplanted OXygen] In the manufacture of semiconductor devices, a thin layer of insulating silicon dioxide is formed beneath the surface of a monocrystalline silicon substrate to form a buried dielectric layer. The layer is formed by implanting oxygen ions at 500 to 600°C and then annealing at > 1000°C. 

Figure 4.23. Two methods used to fabricate silicon-on-insulator (SOI) wafers. Illustrated are the (a) Smartcut procedure where two oxidized wafers are bonded together and (b) SIMOX procedure where oxygen ions are implanted into a bulk Si wafer.

SIMOX wafers are made by implanting oxygen at a certain depth into a conventional silicon wafer. 

SIMOX and Unibond wafers require epitaxy to increase the thickness of the top layer. An epitaxial layer up to 60 pm thick can be grown on such wafers the resulting thickness tolerance depends on the epitaxy process tolerances and is typically in the range of 5% of the final thickness (4a value). 

Chen, K.W. et al.. Characterization of nano-sized Si islands in buried oxide layer of SIMOX by conducting AFM, Chem Phys Lett 376, 748-752, 2003. 

Figure 6.16. IR absorbance spectra of SOI structures made by (a) SIMOX and (b) SIA processes. Reprinted, by permission, from A. Perez, J. Samitier, A. Comet, J. R. Morante, P. L. F. Flemment, and K. P. Homewood, Appl. Phys. Lett. 57, 2443 (1990). Copyright 1990 American Institute of Physics.

Mizuno, T., N. Sugiyama, A. Kurobe, S.-i. Takagi. 2001. Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology. IEEE Transactions on Electron Devices 48(8) 1612—1618. 

---