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Silicones values

To put this in better perspective, although it is true that the hyperfine values for Mu in GaAs and GaP are closer than for any other pair of similar crystals (they differ by 30 MHz or 1.0% see Table II), there are several other cases in which A values are close but just not that close. For example, Table II shows that the hyperfine parameters for ZnS and ZnSe differ by 91 MHz or 2.6% and those for Mu" in CuCl and CuBr differ by 39 MHz or 3.1%. All of these could be explained if they corresponded to muonium in a tetrahedral interstitial surrounded by four cations to which they more strongly bond than to the anions, a suggestion similar to that of Souiri et al. (1987) and Cox (1987). Whether this could also be consistent with the closeness of the A values for Mu1 and Mu11 in CuCl and in CuBr, with the pLCR observation of appreciable anion bonding for Mu" in CuCl (see Section IV.4) and with the cluster of hyperfine parameters in SiC near the average of the diamond and silicon values (see Section IV.5), will probably require further experimentation and especially theoretical study to determine. [Pg.588]

The hardness, defined as the resistance to plastic deformation, of microporous silicon decreases with porosity p from the bulk silicon value of about 11.5 GaP to values around 4 GaP for porosities in the order of 75% following a (1-p)2/3 dependence. For porosities above 75% a further decrease in hardness is observed. The hardness of PS formed on highly doped p-type substrates is found to be somewhat less than that observed for low doped substrates, which may be caused by the more columnar structure of meso PS [Du5]. [Pg.115]

In a scatter plot of DFTB vs. experiment, one can see a too-small slope with respect to experiment. This is known from C NMR DFTB calculations and originates from the limited basis used for the sum-over-states calculation of the paramagnetic part of the shielding constants. Further, the silicon values in silanes are affected by a systematic shift of each site, proportional to the number of silicon neighbors of the site, which is also observed in full DFT calculations [2]. [Pg.326]

Since anionic polymerization provides for the initiation of all chains to occur at the same time, there can be no new chains started during the course of polymerization, as would be the case in free-radical polymerization. This means that the precipitated system is set and that chain growth must occur by Incorporation of monomer at the particle. If polymerization is to occur at any reasonable rate, then the active living" ends of the chains must be accessible to the monomer. The data in Table 5 demonstrates that the chain ends are readily accessible to the monomer. In this experiment, trimethylchlorosilane was used to terminate the reaction. The amount of silicon measured was compared to that expected if all the carbanion chain ends were converted to the silane derivative. Based upon the close agreement between the measured and theoretical silicon values, it appears that the carbanions in the particle are readily accessible up to 85% conversion. [Pg.388]

Table 1 Typical 30 g batch processing of65-75 % mesoporous silicon (values for single-pass milling, only - based on ... Table 1 Typical 30 g batch processing of65-75 % mesoporous silicon (values for single-pass milling, only - based on ...
The size of the exciton is approximately 50 A in a material like silicon, whereas for an insulator the size would be much smaller for example, using our numbers above for silicon dioxide, one would obtain a radius of only 3 A or less. For excitons of this size, it becomes problematic to incorporate a static dielectric constant based on macroscopic crystalline values. [Pg.127]

Figure Bl.22.3. RAIRS data in the C-H stretching region from two different self-assembled monolayers, namely, from a monolayer of dioctadecyldisulfide (ODS) on gold (bottom), and from a monolayer of octadecyltrichlorosilane (OTS) on silicon (top). Although the RAIRS surface selection rules for non-metallic substrates are more complex than those which apply to metals, they can still be used to detemiine adsorption geometries. The spectra shown here were, in fact, analysed to yield the tilt (a) and twist (p) angles of the molecular chains in each case with respect to the surface plane (the resulting values are also given in the figure) [40]. Figure Bl.22.3. RAIRS data in the C-H stretching region from two different self-assembled monolayers, namely, from a monolayer of dioctadecyldisulfide (ODS) on gold (bottom), and from a monolayer of octadecyltrichlorosilane (OTS) on silicon (top). Although the RAIRS surface selection rules for non-metallic substrates are more complex than those which apply to metals, they can still be used to detemiine adsorption geometries. The spectra shown here were, in fact, analysed to yield the tilt (a) and twist (p) angles of the molecular chains in each case with respect to the surface plane (the resulting values are also given in the figure) [40].
Note for highly substituted allenes containing silicon, gernanium or tin we observed deviations of the calculated chemical shifts from the measured values, and one should therefore treat these particular cases with special care. [Pg.256]

Interplanar Spacings. Diffractometer alignment procedures require the use of a well-prepared polycrystalline specimen. Two standard samples found to be suitable are silicon and a-quartz (including Novaculite). The 26 values of several of the most intense reflections for these materials are listed in Table 7.6 (Tables of Interplanar Spacings d vs. Diffraction Angle 26 for Selected Targets, Picker Nuclear, White Plains, N.Y., 1966). To convert to d for Ka or to d for Ka2, multiply the tabulated d value (Table 7.6) for Ka by the factor given below ... [Pg.702]

Schematic diagram showing how placing a thin layer of highly dispersed carbon onto the surface of a metal filament leads to an induced dipolar field having positive and negative image charges. The positive side is always on the metal, which is much less electronegative than carbon. This positive charge makes it much more difficult to remove electrons from the metal surface. The higher the value of a work function, the more difficult it is to remove an electron. Effectively, the layer of carbon increases the work function of the filament metal. Very finely divided silicon dioxide can be used in place of carbon. Schematic diagram showing how placing a thin layer of highly dispersed carbon onto the surface of a metal filament leads to an induced dipolar field having positive and negative image charges. The positive side is always on the metal, which is much less electronegative than carbon. This positive charge makes it much more difficult to remove electrons from the metal surface. The higher the value of a work function, the more difficult it is to remove an electron. Effectively, the layer of carbon increases the work function of the filament metal. Very finely divided silicon dioxide can be used in place of carbon.
Ores which comprise a variety of minerals are, as a rule, heterogeneous. An ore body is usually named for the most important mineral (s) in the rock, referred to as value minerals, mineral values, or simply values. Some minerals contain metals, which are extracted by concentration and smelting. Other minerals, such as diamond, asbestos (qv), quartz (see Silicon COMPOUNDS), feldspars, micas (see Mica), gypsum, soda, mirabillite, clays (qv), etc, maybe used either as found, with some or no pretreatment, or as stock materials for industrial compounds or building materials (qv) (3). [Pg.392]

Occurrence and Recovery. Rhenium is one of the least abundant of the naturally occurring elements. Various estimates of its abundance in Earth s cmst have been made. The most widely quoted figure is 0.027 atoms pet 10 atoms of silicon (0.05 ppm by wt) (3). However, this number, based on analyses for the most common rocks, ie, granites and basalts, has a high uncertainty. The abundance of rhenium in stony meteorites has been found to be approximately the same value. An average abundance in siderites is 0.5 ppm. In lunar materials, Re, when compared to Re, appears to be enriched by 1.4% to as much as 29%, relative to the terrestrial abundance. This may result from a nuclear reaction sequence beginning with neutron capture by tungsten-186, followed by p-decay of of a half-hfe of 24 h (4) (see Extraterrestrial materials). [Pg.160]

Copper-alloy corrosion behavior depends on the alloying elements added. Alloying copper with zinc increases corrosion rates in caustic solutions whereas nickel additions decrease corrosion rates. Silicon bronzes containing between 95% and 98% copper have corrosion rates as low as 2 mil/y (0.051 mm/y) at 140°F (60°C) in 30% caustic solutions. Figure 8.2 shows the corrosion rate in a 50% caustic soda evaporator as a function of nickel content. As is obvious, the corrosion rate falls to even lower values as nickel concentration increases. Caustic solutions attack zinc brasses at rates of 2 to 20 mil/y (0.051 to 0.51 mm/y). [Pg.187]

To determine the value of p, the saturation or the B-H curve of the silicon steel being used must be available. Assuming a normal flux density for such a core to be 1 1 wb/ m (see also Section 1.9) and making use of a normal B-H curve as shown in Figure 28.28, the corresponding value of H for a value of B as 1.1 wb/m can be read as 200 A/m,... [Pg.886]


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