Silicon wires

Dieletric Silicone Wire and cable electrical insulation... 

Tong, L. Lou, J. Mazur, E. Single mode guiding properties of subwavelength diameter silica and silicon wire waveguides, Opt. Express 2004, 12, 1025 1035... 

Fig. 7.15 I ncrease in bandgap energy AEc with decreasing diameter of a silicon cluster or dot (open symbols) or a silicon wire (filled symbols), as predicted by various theoretical investigations.

Silicon wires or pillars are one-dimensional (ID) structures that are confined in only two dimensions. Weak red PL as well as EL is observed from silicon pillars... 

Yu, D. P, Lee, C. S., Bello, 1., Zhou, G. W., and Bai, Z. G., Synthesis of nano-scale silicon wires by exdmer laser ablation at high temperature. Solid State Commun. 105, 403 (1998). 

Infrared spectroscopy has been used to identify silicone polymers289, and resins290-292, silicone wire enamels293, silicone emulsions and elastomers294-296. Infrared spectroscopy in conjunction with gas chromatography has been used for the examination of organosilicon isomers297. 

This major advance in nanoelectronic device fabrication was accompanied by key new insights into fundamental electronic behaviour at the atomic limit. Remarkably, the heavily doped silicon wires were found to have Ohmic conductance (i.e. their resistivity was independent of wire diameter or length) due to the very small separation between donors ( 1 nm, i.e. less than the Bohr radius). The abrupt doping profile - ranging from 10 cm outside the wire to 10 inside - yields very effective charge confinement. Moreover, and perhaps surprisingly, the atomic wires tolerate extremely high current densities (5 x 10 Acm ), comparable to those in state-of-the-art copper interconnects. 

Svendsen, W.E., and Castillo-Leon, J. (2011) Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires. BioNanoScience, 1, 31—37. 

Maiolo, J. R. Atwater, H. A. Lewis, N. S., Macroporous silicon as a model for silicon wire array solar cells. J. Phys. Chem. C2008,112, 6194-6201. 

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