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Silicon tungsten

Bedzyk and co-workers used the XSW technique to probe the ion distribution in the electrolyte above a charged cross-linked phospholipid membrane adsorbed onto a silicon-tungsten layered synthetic microstructure (LSM) as shown in Figure 2.80(a). The grazing-angle incidence experimental set-up... [Pg.155]

In the data bank ADAS (Atomic Data Analysis Structure) [23,24] one can find ti/XB-values for some important elements and lines, e.g., hydrogen, helium, beryllium, carbon, nitrogen, oxygen, neon, chromium, and molybdenum. However, there is still a lack of values for significant impurities with a number of their ionization states, e.g., neutral neon, silicon, tungsten, etc. (see below). A more elaborate version of the graph shown in [16] is provided in Fig. 6.3, which already contains improved numbers for Crl, Mol and Da for different densities. [Pg.140]

Fig. 2 Cross section of a silicon microelectronic memory circuit showing several materials deposited by CVD polycrystalline silicon, tungsten (W), SiOg, and SigN. Photo courtesy of Pat Shea, Sandia National Laboratories. Fig. 2 Cross section of a silicon microelectronic memory circuit showing several materials deposited by CVD polycrystalline silicon, tungsten (W), SiOg, and SigN. Photo courtesy of Pat Shea, Sandia National Laboratories.
As the integration goes on it can be envisioned that the role of the mono-silicon/tungsten interface becomes less since the device performance demands more and more the technique of cladding the shallow junction areas with silicides. [Pg.54]

SeF6[g] SELENIUM HEXAFLUORIDE (GAS) 1477 SI2W 2-SILICON TUNGSTEN 1527... [Pg.1917]

Hot-filament MOCVD was successfiilly introduced as a new method for the deposition of thin silicon films, using cyclopentadienyl-substituted silanes as precursors. Due to its low fragmentation temperature and the high silicon growth rate (CsMe5)Si2H5 has proven to be a useful material for silicon thin film deposition. The use of a hot filament does not affect the impurities in the film, but leads, due to the lowered substrate temperatures, to a clearly improved interface quality of the silicon-tungsten multilayers. [Pg.805]

Figure 4. Simple microstructures grown with a single laser system. Left freestanding boron microcoil (courtesy of Prof. M. Boman, University of Uppsala, Sweden). Right silicon/tungsten microsolenoid (courtesy of Prof. M. Boman, University of Uppsala, Sweden). Figure 4. Simple microstructures grown with a single laser system. Left freestanding boron microcoil (courtesy of Prof. M. Boman, University of Uppsala, Sweden). Right silicon/tungsten microsolenoid (courtesy of Prof. M. Boman, University of Uppsala, Sweden).

See other pages where Silicon tungsten is mentioned: [Pg.256]    [Pg.257]    [Pg.395]    [Pg.48]    [Pg.80]    [Pg.317]    [Pg.498]    [Pg.42]    [Pg.159]    [Pg.97]    [Pg.341]    [Pg.211]    [Pg.500]    [Pg.812]    [Pg.567]    [Pg.567]    [Pg.915]    [Pg.915]    [Pg.1527]    [Pg.53]    [Pg.1403]    [Pg.581]    [Pg.208]   
See also in sourсe #XX -- [ Pg.160 ]




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Silicon complexes with tungsten

Tungsten and Silicon

Tungsten silicon carbides

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