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Silicon structural reliability

Recent advances further enhance their commercial potential in metal matrix composites such as aluminum, nickel, and copper ceramic matrix composites, such as alumina, zirconia and silicon nitride and glass ceramic matrix composites such as lithium aluminosilicate. Silicon carbide whiskers increase strength, reduce crack propagation, and add structural reliability in ceramic matrix composites. Structural applications include cutting tool inserts, wear parts, and heat engine parts. They increase strength and stiffness of a metal, and support the design of metal matrix composites with thinner cross sections than those of the metal parts they replace, but with equal properties in applications such as turbine blades, boilers and reactors. [Pg.40]

One consequence of the reactivity of silicones towards acidic or basic conditions is that it is exceptionally difficult to reliably assemble complex silicone structures. Almost inevitably, the reaction conditions used to create a structure also lead to structural fragmentation. Even linear polymers of narrow molecular weight are difficult to prepare on a large scale and in good yield. The very few reports of controlled silicone synthesis, for example, of a silicone dendrimer [3], utilize difficult-to-reproduce and non-generic reaction conditions. [Pg.163]

Wiederhorn, S. M. and Tighe, N. J., Structural reliability of yttria-doped hot-pressed silicon nitride at elevated temperatures. J. Am. Ceram. Soc., 1983, 66, pp. 884-9. [Pg.375]

The methods available for structure determination are surveyed. Those that are applicable to the gas phase, i.e. electron diffraction and rotational spectroscopy, are suitable mainly for small molecules. Data for the crystalline phase are usually relatively straightforward to obtain, but acquiring reliable structural data for silicon compounds as liquids or in solution by diffraction methods or liquid crystal NMR spectroscopy remains a challenge. [Pg.23]

It has been shown by the results presented above that from the combined application of matrix isolation and IR spectroscopy, reliable knowledge about structure and bonding characteristics of small reactive silicon compounds can be obtained. Furthermore, we have demonstrated that quantum mechanical calculations are a powerful tool to confirm and interpret the experimentally deduced results. [Pg.152]

The stereochemistry at silicon is extremely sensitive to the nature of the nucleophiles (Tables I, II, and VI). As a consequence, the stereoselectivity, i.e., either percentage of RN or percentage of IN, is a quite sensitive and reliable measure of the dependence of the mechanism upon small changes in the structure of the anion, the metal, or the solvent. The analysis of the experimental data can take the following form ... [Pg.278]

The cyclopropenium cation (45, M = C) is a well established aromatic system with a high aromatic stabilization energy of 58.7 kcalmol-1 [equation 18, M = C, at B3LYP/6-311++G(2d,2p)]70. What happens when one carbon atom is substituted by silicon At HF/STO-2G the monosilacyclopropenium cation, 46, has a rather delocalized structure with r(C-C) = 1.393 A, r(C-Si) = 1.722 A and with CSiC and SiCC bond angles of 46.3° and 66.9°, respectively413. However, according to equation 19 which measures the effect of delocalization, 46 is destabilized by 11 kcalmol-1 (HF/3-21G//HF/STO-2G) while 45, M = C is stabilized by 36 kcalmol-1. Unfortunately, this study used a very low computational level and should be repeated using more reliable methods. [Pg.33]

In addition to improving structural order, reliable improvements of device performance have been demonstrated through optimization of device interfaces and architectures. The architectures are perhaps more easily addressed, and are also related to improving the structural order. Several possible constructions of TFT are known from the long history of silicon-based devices. These were the first architectures adopted for OTFTs also. Top and bottom contact, indicating the location of the source and drain electrodes with regard to the semiconductor, are the most widely used. [Pg.41]


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See also in sourсe #XX -- [ Pg.578 ]




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