Silicon sticking probability

Studies of the sticking probability of oxygen on silicon surfaces revealed a change from 10 5 to 1 with increasing density of surface steps (52a). Crystals with a large density of steps may be prepared by cleavage, and their chemistry can be readily studied. Ibach has associated the increased activity of disso-ciatively chemisorbed oxygen to the presence of electron orbitals that became available on silicon atoms at low coordination number step sites on surfaces. 

The early work of Law [7] showed that H2 has a very low sticking probability on silicon, though H atoms (typically generated by passing H2 over a hot... 

A sticking model is used for the plasma-wall interaction [137]. In this model each neutral particle has a certain surface reaction coefficient, which specifies the probability that the neutral reacts at the surface when hitting it. In case of a surface reaction two events may occur. The first event is sticking, which in the case of a silicon-containing neutral leads to deposition. The second event is recombination, in which the radical recombines with a hydrogen atom at the wall and is reflected back into the discharge. 

A more detailed way of using the sticking-coefficient specification is to say that SiH2(g) reacts with probability y,- upon each collision with a bare surface silicon atom, Si(s) ... 

A. Matsuda, K. Nomoto, Y. Takeuchi, A. Suzuki, Y. Yuuki, J. Perrin Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphus silicon. Surf. Sci. 227, 50 (1990)... 

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