Silicon-processing technology basis

These process steps, as practiced for the trench isolation process, are either new or modifications or extensions of previously practiced processes used for other aspects of device fabrications. Consequently, several of these steps did require general process development on an individual basis, prior to their integration into the overall process. Some of the efforts have resulted in new basic knowledge in the area of reactive ion etching (RIE) and chemical vapor deposition, surface planarization with resist materials, and thermal oxidation or nonplanar silicon surfaces. The author has previously presented various aspects of these process activities (4-8), as applied to the bipolar device technology. 

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