Silicon hole conductivity

Conductivity in doped silicon crystals is determined by the properties of the added charge earners or majority earners. In n-type silicon, electrons are majonty carriers and holes are minority carriers. There are fewer holes in n-type silicon than in undoped silicon because the large number of electrons causes some recombination with preexisting holes. In p-type silicon, holes are the majonty earners and electrons are the minority carriers. Fewer electrons are present in p-type silicon than in undoped silicon because of the recombination of some electrons with the enhanced population of holes. 

Grozema FC, Siebbeles LDA, Warman JM, Seki S, Tagawa S, Scherf U. (2002) Hole conduction along molecular wires Sigma-bonded silicon versus pi-bond-conjugated carbon. Adv Mater 14 228-231. 

Fig. 1.4 A1 doping of silicon effects the formation of a vacancy in the electronic shell (see arrow tip). The arrow indicates that this results in electronic (hole) conductivity. The electron hole migrates in the opposite direction.

Extrinsic Semiconductors are materials that contain donor or acceptor species (called doping substances) that provide electrons to the conduction band or holes to the valence band. If donor impurities (donating electrons) are present in minerals, the conduction is mainly by way of electrons, and the material is called an n-type semiconductor. If acceptors are the major impurities present, conduction is mainly by way of holes and the material is called a p-type semiconductor. For instance in a silicon semiconductor elements from a vertical row to the right of Si of... 

Electrical cells based on semiconductors that produce electricity from sunlight and deliver the electrical energy to an external load are known as photovoltaic cells. At present most commercial solar cells consist of silicon doped with small levels of controlled impurity elements, which increase the conductivity because either the CB is partly filled with electrons (n-type doping) or the VB is partly filled with holes (p-type doping). The electrons have, on average, a potential energy known as the Fermi level, which is just below that of the CB in n-type semiconductors and just above that of the VB in p-type semiconductors (Figure 11.2). 

The electronic properties of silicon are essential in the understanding of silicon as an electrode material in an electrochemical cell. As in the case of electrolytes, where we have to consider different charged particles with different mobilities, two kinds of charge carriers - electrons and holes - are present in a semiconductor. The energy gap between the conduction band (CB) and the valence band (VB) in silicon is 1.11 eV at RT, which limits the upper operation temperature for silicon devices to about 200 °C. The band gap is indirect this means the transfer of an electron from the top of the VB to the bottom of the CB changes its energy and its momentum. 

We discuss the dissolution of surface atoms from elemental semiconductor electrodes, which are covalent, such as silicon and germanium in aqueous solution. Generally, in covalent semiconductors, the bonding orbitals constitute the valence band and the antibonbing orbitals constitute the conduction band. The accumulation of holes in the valence band or the accumulation of electrons in the conduction band at the electrode interface, hence, partially breaks the covalent bonding of the surface atom, S, (subscript s denotes the surface site). 

Polysilanes can be regarded as one-dimensional analogues to elemental silicon, on which nearly all of modern electronics is based. They have enormous potential for technological uses [1-3]. Nonlinear optical and semiconductive properties, such as high hole mobility, photoconductivity, and electrical conductivity, have been investigated in some detail. However, their most important commercial use, at present, is as precursors to silicon carbide ceramics, an application which takes no advantage of their electronic properties. 

The mobilities of holes are always less than those of electrons that is fXh < Me- In silicon and germanium, the ratio [ie/[ih is approximately three and two, respectively (see Table 6.2). Since the mobilities change only slightly as compared to the change of the charge carrier densities with temperature, the temperature variation of conductivity for an intrinsic semiconductor is similar to that of charge carrier density. 

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