Silicon dioxide thermal conductivity

The next three chapters review the deposition of thermally-induced dielectric films (Chapter 3) and metallic conducting films (Chapter 4), as well as plasma-enhanced films of either type (Chapter 5). The many chemical systems employed to create these films are considered, and the nature of the resulting films is presented. Films studied are silicon dioxide, silicon nitride, polysilicon, epitaxial silicon, the refractory metal silicides, tungsten and aluminum. 

K. E. Goodson, M. I. Flik, L. T. Su, and D. A. Antoniadis, Annealing Temperature Dependence on the Thermal Conductivity of LPCVD Silicon Dioxide Layers, IEEE Trans. Electron Dev. Lett. (15) 490-492,1993. 

O. W. Kading, H. Skurk, and K. E. Goodson, Thermal Conduction in Metallized Silicon Dioxide Layers on Silicon, Appl. Phys Lett. (65) 1629-1631,1994. 

The integration of low-k dielectrics into BEOL interconnects is not trivial. In foct, die immoisity of die task parallels the transition from aluminum to cq io wiring. The dudleoges can be attributed to die absence of low-k dielectrics available having electrical, diermal, mechanical, or thermal conductivity properties comparable to silicon dioxide. Low-k materiais, in general, are less dense and typically possess a lower modulus and hardness as well as decreased diermal conductivity. 

Basu et allb5 separated mixtures of silicon tetrachloride, chlorine, phosgene, argon, nitrogen, carbon monoxide and carbon dioxide obtained in the reductive chlorination of metal ores on a three column, three detector gas chromatograph. The three gas chromatograms were equipped with the following columns in series Column 1 (20 foot x 0.25 inch) was filled with 15% of Kel-F 10 on Chromosorb T (30 - 60 mesh) and operated at 60 C. Column 2 (5 foot X 0.25 inch) was filled with silica gel (30- 60 mesh) and operated at 139 C. Column 3 (5 foot x 0.25 inch) was filled with molecular sieve 5A (30 - 60 mesh) and operated at 90°C. Thermal-conductivity... 

Silicon dioxide (Si02) is a least expensive material with good thermal and electrical insulation properties. Its resistivity is <10 (Q-cm) and thermal conductivity is about 0.014 (W/cm- C). It is used as a low-cost material for masks in microfabrication process such as etching and deposition. It is also used as a sacrificial material in surface micromachining. 

The PE 2400 CHN Analyzer (Fig. 4) can be modified to perform automatic determination of oxygen. The combustion tube is filled with platinized carbon reagent. The samples are pyrolyzed in an inert atmosphere of argon or helium. The reaction product CO is separated by frontal chromatography and measured by thermal conductivity. In the Leco CHN Analyzer, carbon monoxide is converted to carbon dioxide to be measured by infrared absorption. Neither CHN method is suitable for the analysis of organic substances which contain fluorine, phosphorus, silicon, or most metallic elements. 

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