Silicon carbide switches

Richmond, J., Hard-Switched Silicon IGBTs Cut Switching Losses in Half with Silicon Carbide Schottky Diodes, Cree Inc. Application Note, CPWR-AN03, 2003. 

Hefner, A., et ah, Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications, Conf. Record of the 2000 IEEE Industry Application Conf., Vol. 5, October 8-12, 2000, pp. 2948-2954. 

After the current is switched of, the furnace is allowed to cool for several days. Then the side walls are removed, and the excess reaction mixture is carried off. The roll of silicon carbide contains not only the original resistance core, but also graphite formed by decomposition of silicon carbide. The boundary between the graphite and the SiC is very sharply defined. The innermost SiC zone is of the highest quality, as the purest and largest crystals can form in this region. Moving... 

A reduction of the required energy could be reached by the incorporation of conductive fillers such as heat conductive ceramics, carbon black and carbon nanotubes [103-105] as these materials allowed a better heat distribution between the heat source and the shape-memory devices. At the same time the incorporation of particles influenced the mechanical properties increased stiffness and recoverable strain levels could be reached by the incorporation of microscale particles [106, 107], while the usage of nanoscale particles enhanced stiffness and recoverable strain levels even more [108, 109]. When nanoscale particles are used to improve the photothermal effect and to enhance the mechanical properties, the molecular structure of the particles has to be considered. An inconsistent behavior in mechanical properties was observed by the reinforcement of polyesterurethanes with carbon nanotubes or carbon black or silicon carbide of similar size [3, 110]. While carbon black reinforced materials showed limited Ri around 25-30%, in carbon-nanotube reinforced polymers shape-recovery stresses increased and R s of almost 100% could be determined [110]. A synergism between the anisotropic carbon nanotubes and the crystallizing polyurethane switching segments was proposed as a possible... 

Transistor Three-terminal amplifier and on/ off switch made from a semiconductor, most frequently silicon but sometimes germanium, germanium-silicon, gallium arsenide, or silicon carbide. 

VII. ALTERNATIVE SILICON CARBIDE POWER SWITCH STRUCTURES... 

Applying our experience in three-dimensional, selective carbon nanotube growth techniques, we have constructed multifunctional conductive brushes with carbon nanotube bristles grafted on fiber handles, and demonstrated their several unique tasks such as cleaning of nanoparticles from narrow spaces, coating of the inside of holes, selective chemical adsorption, and as movable electromechanical brush contacts and switches [49], The nanotube brush consists of a silicon carbide fiber as the handle and aligned multiwalled carbon nanombes grafted on the fiber ends as bristles. 

Silicon carbide is an important wide-energy-gap semiconductor used for high power switching devices and as a substrate for some optical devices. It is stable, easily created and the elements from which it is formed are inexpensive and common. 

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