Sheet conductivity

Fig. S.24 Dimensionless Temperature Data for a Flat Sheet (Conduction/Convection)...

FET characteristics published by a number of laboratories engaged in this development. In Fig. 6 some of the most recent results are shown. We follow Powell et al. (1981) in plotting the sheet conductance Gs against the field at the insulator/a-Si H interface in order to allow for different device geometries and gate dielectrics. The interface field has been calculated from VG/esid, where and ea are the relative permittivities of the gate insulator and of the a-Si H, respectively, and d is the thickness of the gate insulator. The curve denoted by D represents the data described in this paper. Curve P is from Powell et al. (1981) at the Philips Research Laboratories the curves marked T are from data published by Matsumura et al. (1981) and Hayama and Matsumura (1981) and curves C and F represent recent results from the Canon (Okubo et al., 1982) and Fujitsu (Kawai et al., 1982) laboratories, also in Japan. 

Are ductile and can be rolled into thin wires Are malleable and can be hammered into thin sheets Conduct heat Conduct electricity Have a shiny luster Tend to lose electrons and become cations Make up two-thirds of the periodic table Are soft and brittle Lack luster Are poor conductors of heat Are poor conductors of electricity Tend to gain electrons and form anions... 

Figure 3.25 Calculated acoustoelectric velocity and attenuation changes vs the sheet conductivity of a film overlay.

Example 3.6 Deposition of a 100 nm-thick Al film on a UNbO SAW device causes sheet conductivity vary from < VoC., to r, > VoC,. (a) What acoustoelectric velocity and attenuation changes arise from this film (b) What is the maximum acoustoelectric attenuation (in dB) for a lOO-MHz LiNbOj device with a path length of 100 ... 

It is apparent from Equation 3.36 that the acoustoelectric interaction takes on a particularly simple form when Aa/k is plotted vs Av/vo, with sheet conductivity as the variable parameter as oi increases from zero, a semicircle centered at (Av/Vo, Aa/k) = (-f /4,0) and having radius K /A is traced out [48]. The angular position along the semicircle corresponding to a, is [48]... 

The sheet conductivity of samples placed at different positions within the reactor under two different conditions are shown in Figures 1 and 2. The conductivities on the tin mirrors prepared in Exp. 1 were in the range (2.1 X 10 ) - (9.7 X 10 ) fi lcm l. The maximum conductivity obtained in yet another experiment under similar conditions was 3.75 X 10 fi-1cm-- - at a sample position 24 cm from the monomer inlet in the reactor. 

Figure 6. Change in sheet conductivity with increase in temperature.

Figure 7. Increase in sheet conductivity with time at higher...

A commercial code called FIDAP1 was customized and used to solve the set of equations. Initially, the boundary value problem was solved subject to the nonlinear boundary conditions Eq.[20] for Gj=G which is the initial dimensionless sheet conductance. Growth of the deposit was then simulated by using the converged solution of the prior step j, according to the formula ... 

Figure 8 shows the effect of the initial seed layer conductance on the plated thickness nonuniformity. It was determined that the nonuniformity depends upon the initial sheet conductance to the -0.48 power and upon the plated film conductance to the -0.70 power ( Ni K C,f 4SG-° 70). The effect of the Wagner number is shown in Figure 9. The higher the Wagner number the better the non uniformity because the ohmic effects become less important at high Wagner numbers. It was determined that the non uniformity is proportional to the Wagner number to the -0.60 power (Nt K G 0 irG 0 70W

A model of a cup plater is described that takes into account the ohmic drop in the electrolyte, the charge transfer over potential at electrode surface, the ohmic drop within the seed layer and the plated film, and finally the transient effect of the growing metal film as it plates up. Instead of treating the seed layer as a growing domain, we artificially hold its thickness constant and allowed the sheet conductance to increase with time. Additionally, the thickness of the seed-layer domain was artificially increased to facilitate easier meshing. It is shown how all these transformations affect the resulting equations and that one can solve for G which is the dimensionless sheet conductance of the growing film. 

Figure 8. Nonuniformity transient for a wafer with a peripheral axisymmetric contact for different values of the intial sheet conductance (C ) ...

FIGURE 2.1.18 Sheet conductivity o of the vacuum-gap rubrene single-crystal OFET, measured as a function of Vg at different T using the four-probe technique. (From Podzorov, V. et al., Phys. Rev. Lett., 93, 086602, 2004.)... 

Five stages were resolved during interface formation in Yb/Si(lll) system by AES, EELS data and in situ Hall measurements. Some amplitude oscillations have been observed in sheet conductivity, hole mobility and surface hole concentration within the Yb coverage range below 6 ML. The conductivity oscillations are explained by transition from semieonductor-type conductivity at the first two-dimensional Yb growth stages to metal-like conductivity of 2D and 3D Yb silicide films. 

The field-effect method measures the surface sheet conductance as a function of applied voltage at the semiconductor-insulator interface in MOS device structures. This surface conductance depends on the degree of carrier accumulation or depletion at the interface, which in turn depends on the band-bending function for a given applied gate voltage. This band bending is... 

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