Surface hole concentration

Jv,Q is the exchange current density in the valence hand at equilibrium, ps denotes the equilibrium surface concentration of holes, ps represents the dynamic surface concentration of holes related to bulk surface hole concentration po by ... 

For the present discussion, it is assumed that the second case applies, i.e., that electron transfer and recombination proceed via X/X+. In this case, the surface hole concentration is given by... 

Under conditions of steady state illumination, dpjdt = 0 in equation (8.15), so that the surface hole concentration is given by the ratio... 

The mechanism of the etching process is thought to be related to the surface hole concentration, with an initial oxidation step according to [49] ... 

Fig. 17. Energy scheme for pore formation in p-type silicon. At the pore base, the surface hole concentration is in quasi-equilibrium and increases exponentially as the Fermi level is lowered toward the flat hand condition (a). In the regions between the pores the minimum feature size is determined hy enlargement of the band gap due to quantum confinement holes are excluded from these regions, as shown in (b) [79].

The FIF-CrOs etching system is widely used for defect sensitive etching and delineation of junctions between silicon layers of different doping concentrations. The etch rate of silicon in pure FIF solution is very low due to the lack of holes at the OCR Addition of CrOs increases the etch rate due to the increase of surface hole concentration resulting from the reduction of Cr. CrOs dissolves in water to form... 

Since cGe4+ is one fourth the surface hole concentration, Chs, due to the electrical charge balance (cGe4+ = 4chs), the surface ion concentration, cGl,4, is described as a function of both the space charge potential, Acj>sc, and the hole concentration, cj[, in the bulk of the semiconductor ... 

Five stages were resolved during interface formation in Yb/Si(lll) system by AES, EELS data and in situ Hall measurements. Some amplitude oscillations have been observed in sheet conductivity, hole mobility and surface hole concentration within the Yb coverage range below 6 ML. The conductivity oscillations are explained by transition from semieonductor-type conductivity at the first two-dimensional Yb growth stages to metal-like conductivity of 2D and 3D Yb silicide films. 

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