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Semiconductors, III

Molecular beam epitaxy is an important technique for the preparation of semiconductors (III-V compounds). The finesse and sophistication of modern preparative solid... [Pg.159]

Type Electrical property I p-Type semiconductor II n-Type semiconductor III Insulator... [Pg.675]

Han P Y, Cho G C and Zhang X C 1999 Mid-iR THz beam sensors expioration and application for phonon spectroscopy, uitrafast phenomena in semiconductors iii Proc. SPiE 3624 224-33... [Pg.1261]

M.Syvajarvi, Int. Workshop on Bulk Nitride Semiconductors III (Sept. 4-9... [Pg.470]

See other pages where Semiconductors, III is mentioned: [Pg.1261]    [Pg.256]    [Pg.829]    [Pg.18]    [Pg.36]    [Pg.2059]    [Pg.2060]    [Pg.2005]    [Pg.2006]    [Pg.2225]    [Pg.2226]    [Pg.470]    [Pg.107]    [Pg.324]    [Pg.194]    [Pg.404]    [Pg.2003]    [Pg.2181]    [Pg.2254]    [Pg.2123]    [Pg.107]   
See also in sourсe #XX -- [ Pg.145 , Pg.154 ]



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Acceptors in III-V and II-VI Semiconductors

Anodic Dissolution of III-V Compound Semiconductors

Etching of III-V Compound Semiconductors

Group III-V semiconductor

Group III-V semiconductor materials

III-V compound semiconductor

III-V semiconductors

Ohmic Contacts to GaN and the III-V Nitride Semiconductor Alloys

Oxygen on III-V Semiconductors

Synthesis of InAs (and III-V semiconductors) by solid-state metathesis

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