Acceptors in III-V and II-VI Semiconductors

Non-variational calculations of the excited acceptor states in cubic compound semiconductors using the finite element method and Arnoldi algorithm have also been performed, with application to some II—VI and III—V compounds [51,52]. The nS3/2 states (n = 1 to 8) have been calculated in the spherical approximation for //, varying between 0 and 0.95 in steps of 0.05 while the nP3/2 (r3), nP5/2 (r3) and nP5/2 7) states (n = 2 to 5) have been calculated including the cubic term 6 (6 = 0.05 and 0.15) for the same domain of variation of /. The case of the single and double acceptors in GaAs has been specifically studied by Fiorentini [18]. A discussion of the results of these calculations will be presented in relation to the experimental data. 

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