Group III-V semiconductor materials

Solid-Liquid Equilibrium in Ternary Group III-V Semiconductor Materials... 

In summary, Group III V semiconductors have several positive features that make them attractive for water photosplitting applications. The combination of high carrier mobility and an optimal band gap (particularly for many of the alloys, see below) coupled with reasonable photoelectrochemical stability for the p type materi al under HER conditions, should inspire continuing scrutiny of Group III V semi conductors. The control of surface chemistry is also particularly crucial to avoid problems with surface recombination. For example, the studies on p InP photoca thode surfaces have shown that a (controlled) ultra-thin interfacial oxide layer is critical for minimizing carrier recombination at the surface.66,199,201,554... 

The fundamental physical properties of nanowire materials can be improved even more to surpass their bulk counterpart using precisely engineered NW heterostructures. It has been recently demonstrated that Si/Ge/Si core/shell nanowires exhibit electron mobility surpassing that of state-of-the-art technology.46 Group III-V nitride core/shell NWs of multiple layers of epitaxial structures with atomically sharp interfaces have also been demonstrated with well-controlled and tunable optical and electronic properties.47,48 Together, the studies demonstrate that semiconductor nanowires represent one of the best-defined nanoscale building block classes, with well-controlled chemical composition, physical size, and superior electronic/optical properties, and therefore, that they are ideally suited for assembly of more complex functional systems. 

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