Semiconductor/semiconductivity stability

Various other semiconductor materials, such as CdSe, MoSe, WSe, and InP were also used in electrochemistry, mainly as n-type photoanodes. Stability against photoanodic corrosion is, naturally, much higher with semiconducting oxides (Ti02, ZnO, SrTi03, BaTi03, W03, etc.). For this reason, they are the most important n-type semiconductors for photoanodes. The semiconducting metal oxide electrodes are discussed in more detail below. 

Semiconducting Properties. Silicon carbide is a semiconductor it has a conductivity between that of metals and insulators or dielectrics (4,13,46,47). Because of the thermal stability of its electronic structure, silicon carbide has been studied for uses at high (>500° C) temperature. The Hall mobility in silicon carbide is a function of polytype (48,49), temperature (41,42,45—50), impurity, and concentration (49). In n-type crystals, activation energy for ionization of nitrogen impurity varies with polytype (50,51). 

Of these design principles, the requirement for building stability against oxidative doping in a semiconductor structure without compromising its semiconductive properties is perhaps the most demanding. 

Aromatic hydrocarbon pentacene is important for application in OTFTs as it has superior field effect mobility, good semiconducting behavior, and stability [153], The chemical structure is shown in Fig. 6.10. Pentacene semiconductor films can be fabricated by sublimation in a vacuum deposition system. Optimization of the fabrication parameters, such as the substrate temperature and deposition rate, can yield a highly ordered pentacene film with improved device performance. Oriented films have optical and electrical anisotropies. 

The silicon surface can be stabilized using surface modification techniques which are divided into three categories (1) attachment of redox mediator which consumes the holes on the surface (2) attachment of electronically conducting polymer and (3) coating with thin metal or semiconducting films to create a buried semiconductor interface. Combinations of these approaches can also be used to stabilize the sihcon surface. ... 

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