Schottky junctions, inorganic

The doped poly(acetylene) forms various junctions such as a) a p-n junction from p- and n- -f CH, b) a hetero-Schottky junction from the inorganic semiconductor and metalic -f CH-, and c) a heterojunction from the inorganic semiconductor and semiconducting The bandgaps of -(-CH (trans- 0.6 eV, cis- 0.9 eV)... 

The potential barrier, and its variation with an applied bias, determine the rectifying characteristics of the junction, as we discuss below, and in principle the barrier height is determined simply from the work functions for the metal and semiconductor. In practice it is usually the case for inorganic semiconductors that the barrier height is not well predicted by this simple relation and surface states and surface layers at the interface play an important role. For the case of polyacetylene the work function is estimated to be of the order of 5 eV [57-62], and we can expect an ohmic junction with gold (( )ni = 5.1 eV), but Schottky junctions with chromium = 4.5 eV), aluminium (( >in = 4.3 eV) and indium ([Pg.574]

Figure 3. Schematic iiius ations of three important eiements of inorganic semiconductor device structures (a) the Schottky contact, (b) the p-n junction, and (c) the insuiated gate capacitor. E, E and E, are the conduction band, vaience band, and Fermi energies, respectiveiy.

To consider the photolysis of water based on the inorganic equivalent of the Z-scheme in nature, semiconductor tandem-type structures, such as shown in Fig. 17, can be analyzed. It should be noted that the structure shown in Fig. 17 represents a solid state analogon of two half-cells for the photoelectrolysis of water in a joint scheme. Therefore, compared to solid state devices with two pn junctions, the band bending of the structure shown develops at the respective electrolyte contact or by forming Schottky-type junctions with the electrocatalysts at the surfaces which then... 

A more advanced experiment is the fabrication and electrical characterization of a Schottky nanodiode. While the fabrication of the device is the easy part, the electrical characterization and data analysis is relatively complex. In general, a Schottky diode is formed when a junction of a p-doped polymer with an n-doped inorganic semiconductor is formed. This construction can be achieved via electrochemical polymerization 6-9) or spin coating 10) the polymer onto the n-doped semiconducting substrate. In... 

The characteristics of Schottky barriers between P(Ac) and various low work function metals under white light illumination are summarized in Table 23-1 [961-971]. Conversion efficiencies are however low maximum efficiencies are only ca. 0.3 % to 1.1 %. Table 23-3 summarizes junction parameters for Schottky barriers and heterojunctions based on interfacing P(Ac) to inorganic semiconductors [961, 972-976, 982]. These inorganic semiconductor/P(Ac) cells were found to have higher conversion efficiencies, ca. 6.2%, as compared to Au/GaAs cells, ca. 4.6%. 

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