Scanning electron microscopy electrical techniques

This technique can be applied to samples prepared for study by scanning electron microscopy (SEM). When subject to impact by electrons, atoms emit characteristic X-ray line spectra, which are almost completely independent of the physical or chemical state of the specimen (Reed, 1973). To analyse samples, they are prepared as required for SEM, that is they are mounted on an appropriate holder, sputter coated to provide an electrically conductive surface, generally using gold, and then examined under high vacuum. The electron beam is focussed to impinge upon a selected spot on the surface of the specimen and the resulting X-ray spectrum is analysed. 

A.H. Deutchman and R.J. Partyka (Beam Alloy Corporation observe, "Characterization and classification of thin diamond films depend both on advanced surface-analysis techniques capable of analyzing elemental composition and microstructure (morphology and crystallinity), and on measurement of macroscopic mechanical, electrical, optical and thermal properties. Because diamond films are very thin (I to 2 micrometers or less) and grain and crystal sizes are very small, scanning electron microscopy... 

The phase composition of the resulted specimens was identified by X-ray diffraction (XRD). Rod-like pieces (3x3xl5mm) and disk-shaped pieces (2mm thickness and 10mm diameter) were cut out for the electrical conductivity measurement and the thermal conductivity measurement, respectively. Microstmcture and phase distribution were observed by a scanning electron microscopy equipped with EPMA (JEOL JXA-8621MX). Electrical conductivity was measured using a D.C. four-probe method. Thermal conductivity was measured using a laser-flash technique. All the measurements were performed in the temperature range of 300 to 1200 K. 

Highly boron-doped diamond films, which have been widely studied in electrochemistry, can be grown by chemical vapor deposition (CVD) and are electrically conductive. Different electrochemical properties of boron-doped diamond films have been studied, such as reactivity [133] and electronic structure [134]. Different characterization techniques have been used to study the electrochemistry of diamond, such as scanning electron microscopy [123, 135] and Raman spectroscopy [125,136]. 

In the following pictures obtained by scanning electron microscopy the shape of the CdS-Cu S heterojunction formed by topotaxial techniques will be illustrated. The structure of the heterojunction and the surface are of major influence on the optical and electrical data of the cell. 

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