Rubrene transistor

Several types of single-crystal OEETs based on rubrene demonstrate anisotropy of surface conductivity [35,38,48]. In rubrene devices based on PDMS stamps, the mobihty along the crystallographic b axis exceeds the mobility along the a axis by a factor of three (Pigs. 2.1.10 and 2.1.16) [35], Similar Po /po ratio has been observed for rubrene transistors with parylene gate dielectric [48]. A clear correlation... 

Many attempts were made to fabricate organic field effect transistors from rubrene thin films [1-4], The largest mobility obtained so far in rubrene OFETs is 2.5 cm2. 

OFETs with parylene dielectric are very stable. For example, the characteristics of rubrene/parylene transistors remained unchanged after storing the devices for more than two years in air and in the dark. 

Stassen, A. E. et ah. Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors, Appl. Phys. Lett., 85, 3899, 2004. 

Takahashi, T. et al., Ambipolar organic field-effect transistors based on rubrene single crystals, AppZ. Phys. Lett., 88, 033505, 2006. 

Podzorov, V., Pudalov, V., and Gershenson, M., Field effect transistors on rubrene single crystals with parylene gate insulator, Appl. Phys. Lett. 82, 1739-1741, 2003. 

Xie W, Frisbie CD (2011) Organic electrical double layer transistors based on rubrene single crystals examining transport at high surface charge densities above 1013 cm . J Phys Chem C 115 14360-14368... 

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