Resonant tunneling transistors

R. Kiehl, Complementary Heterostructure FET Integrated Circuits T. Ishibashi, GaAs-Based and InP-Based Heterostnicture Bipolar Transistors H. C. Liu and T. C. L. G. Sollner, High-Frequency-Tunneling Devices H. Ohnishi, T. More, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits... 

Figure 5. Qualitative electronic state (miniband) band diagrams envisaged for 8Ag,(2-p)X,pY-SOD as a new material for a chemistry approach to a resonance tunneling quantum dot transistor and a heterojunction multiple quantum dot laser array.

H. Ohnishi, T. More, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits... 

We have demonstrated electrografting of a short alkyl-chain i.e. octyltrichlorosilane (OTS) and a new o-jt molecular rectifier i.e. 5-(4-undecenyloxyphenyl)-10,15,20-triphenylporphyrin(2) (TPP-C11) monolayers on hydrated Si (111) surfaces at room temperature. These results demonstrate that electrografting can be utilized for the development of other molecular devices, such as rectifiers, resonant tunnel diodes, transistors etc. 

Quantum effects, such as resonant tunneling, enhanced carrier mobility (two-dimensional electron gas), bound states in the optical absorption spectrum, and nonlinear optical effects (e.g., intensity-dependent refractive indices) have been observed in semiconductor multiple quantum wells (2-4), Examples of devices based on these structures include tunnel diodes, fast optical and optoelectronic switches, high electron mobility transistors, and quantum well lasers. 

Using these two methods nanoscale circuits, consisting of conductors, semiconductors and isolating areas, can be obtained. Elements such as tunnel resonant diodes and single electron transistors can be the structural elements of such circuits, analogous to devices described in the literature [50]. 

EDMR has allowed several different unusual experiments. For example, neutral arsenic dopants interacting with a 2D electron gas have been studied with continuous-wave EDMR at 9.7 GHz and 94 GHz. The Anderson-Mott transition between conduction by sequential tunneling through isolated dopant atoms, and conduction through thermally activated impurity Hubbard bands has been studied in arrays of a few arsenic dopant atoms in a silicon transistor. Single erbium spins with resolved hyperfine structure have been electrically detected after resonant optical excitation. The use of the valley degree of freedom has been eonsidered with dopants in silicon both experimentally and theoretically. The quantum confinement due to silicon nanowires may inerease the temperatures where silicon donor quantum devices ean operate. ... 

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