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Resist positive polymeric

Thus the most reactive (i.e., thermodynamically least stable) monomers are those containing 3- or 4-membered rings. The data in Table 10.1 further show that cyclohexane is the most resistant to polymerization, since AG is positive. For cyclopropane, cyclobutane, cyclopentane, cycloheptane, and cyclooctane, AG for polymerization is negative, indicating that the polymerization is feasible. However, thermodynamic feasibility does not always guarantee realization in practice and no high polymers of cyclopropane and cyclobutane are known (Sawada, 1976). [Pg.598]

Novolacs are linear polymers. Metacresol, a very reactive derivative of phenol, is typically used to prepare novolac resins. The presence of a methyl group at the meta (3 or 5) position of the henzene ring of phenol enhances the reactivity of the compound toward polymerization with formaldehyde. Novolac resins made with metacresol are also more moisture resistant than those with phenol. After preparation, novolac s ability to resist further polymerization is attributed to the fact that the chains terminate with phenol groupings, having been prepared with an excess of phenol. ... [Pg.303]

Classical polymeric resists - positive and negative resist systems... [Pg.236]

Improvement of scratch resistance is one more positive effect of improved crystalline stracture by nucleation." The ultra-high injection speed resulted in the highest surface strength and scratch resistance as compared with lower injection speeds. The high scratch resistance was related to the presence of highly oriented molecules and crystals and the increase in the amoimt of the P-phase crystals near the surface, which were formed at high injection speeds. Crystalhnity and the effective number of entanglements increase scratch resistance of polymer. In addition to the effect of nucleation, there may be other resons for improvement of the scratch resistance of polymeric materials, which include reinforcement of surface layers and reduction of friction coefficient and fiiction wear of the surface. [Pg.212]

The radiation and temperature dependent mechanical properties of viscoelastic materials (modulus and loss) are of great interest throughout the plastics, polymer, and rubber from initial design to routine production. There are a number of laboratory research instruments are available to determine these properties. All these hardness tests conducted on polymeric materials involve the penetration of the sample under consideration by loaded spheres or other geometric shapes [1]. Most of these tests are to some extent arbitrary because the penetration of an indenter into viscoelastic material increases with time. For example, standard durometer test (the "Shore A") is widely used to measure the static "hardness" or resistance to indentation. However, it does not measure basic material properties, and its results depend on the specimen geometry (it is difficult to make available the identity of the initial position of the devices on cylinder or spherical surfaces while measuring) and test conditions, and some arbitrary time must be selected to compare different materials. [Pg.239]

Indole can be nitrated with benzoyl nitrate at low temperatures to give 3-nitroindole. More vigorous conditions can be used for the nitration of 2-methylindole because of its resistance to acid-catalyzed polymerization. In nitric acid alone it is converted into the 3-nitro derivative, but in a mixture of concentrated nitric and sulfuric acids 2-methyl-5-nitroindole (47) is formed. In sulfuric acid, 2-methylindole is completely protonated. Thus it is probable that it is the conjugate acid which is undergoing nitration. 3,3-Dialkyl-3H-indolium salts similarly nitrate at the 5-position. The para directing ability of the immonium group in a benzenoid context is illustrated by the para nitration of the conjugate acid of benzylideneaniline (48). [Pg.49]

Assume that this is the controlling resistance so that U=h. A kinetic model is needed for Rp and for the instantaneous values of and Iw The computer program in Appendix 13 includes values for physical properties and an expression for the polymerization kinetics. Cumulative values for the chain lengths are calculated as a function of position down the tube using... [Pg.499]

Burgmayer and Murray [40] reported electrically controlled resistance to the transport of ions across polypyrrole membrane. The membrane was formed around a folded minigrid sheet by the anodic polymerization of pyrrole. The ionic resistance, measured by impedance, in 1.0 M aqueous KC1 solution was much higher under the neutral (reduced) state of the polymers than under the positively charged (oxidized) state. The redox state of polypyrrole was electrochemically controlled this phenomenon was termed an ion gate, since the resistance was varied from low to high and vice versa by stepwise voltage application. [Pg.577]

Another class of chain scission positive resists is the poly(olefin-sulfones). These materials are alternating copolymers of an olefin and sulfur dioxide, prepared by free radical solution polymerization. The relatively weak C-S bond, 60 kcal/mole compared with 80 kcal/mole for a carbon-carbon bond, is readily cleaved upon irradiation (Gs values for these polymers are typically 10), and several sensitive resists have been developed based on this chemistry (53). One material that has been made commercially available is poly (butene-1-sulfone) (54). [Pg.145]

The resolution capability of a resist is directly related to resist contrast (7) which, for a negative resist, is related to the rate of crosslinked network formation at a constant input dose. It is somewhat more complicated for a positive resist being related to the rate of chain scission and the rate of change of solubility with molecular weight with the latter being markedly solvent dependent. Contrast, like sensitivity, is governed by the type of chemical reactions that occur in the polymeric resist and is affected by molecular parameters such as molecular weight distribution and chemical composition. [Pg.168]


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See also in sourсe #XX -- [ Pg.58 ]




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