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Rare earth metal films

Due to the in-plane surface anisotropy [23] the easy magnetization axis in thin iron films is the in-plane [110] direction being the hard magnetization axis of bulk Fe, switching at a critical thickness to the one of bulk crystals, i.e. the [001] direction. For cobalt films the anisotropy causes the easy magnetization axis to lie in-plane in contrast to bulk-hcp Co with its easy axis perpendicular to the basal plane. Thick rare earth metal films exhibit an easy axis within the surface plane. The shape anisotropy may also change the easy magnetization axis. [Pg.20]

The discrepancy in the measured hydriding rates of La+H may originate from differences in the behavior of massive metal versus thin-film samples. Kinetic results are reported by Atkinson et al. (1976) for the reactions of several rare-earth metal films with hydrogen at low pressures (10 to 10 bar) and low temperatures (— 196 to 100°C),... [Pg.327]

The most common and the fastest techniques for hydrogenation of the rare earth metals is by gas phase loading where H2 is injected into the chamber with the rare earth metal film and pumped out periodically. The hydrogenation performed in H2 ambient is better reproducible, and well suited for exploratory work but suffers from the disadvantage that the quantitative monitoring of the amount of hydrogen getting incorporated in the film on an absolute scale is not possible. Moreover it is not practical for device operation. [Pg.93]

When thin rare earth metal films were begun to be studied in electron microscopes with poor vacuums it quickly became evident that one was studying the characteristics of thin oxide or hydride films. Such studies began with Murr (1%7) and were continued by Kumar et al. (1970) and have become a torrent from Caro and coworkers (see section 2.2.3). Kumar et al. (1970) found the films to oxidize by a linear rate law in contrast to Murr (1967) who observed a logarithmic rate. [Pg.382]

M. Gasgnier, The intricate world of rare earth thin films metals, alloys, intermetallics, chemical compounds,... 105... [Pg.459]

The formation of a rare earth metal oxide on the metal surface, impedes the cathodic reduction of oxygen and thus cathodic inhibition is achieved by the addition of a rare earth metal salt to a system. The surface atom concentration ratio, [Ce/Ce + M], where M is Fe, Al or Zn, is a function of cerium oxide film thickness determined by AES depth profiles as shown in Fig. 12.2. [Pg.900]

Luborsky, F.E. (1987) Amorphous transition metal-rare earth alloy films for magnetooptical recording. Materials Research Society Symposium Proceedings, 80 (Science and Technology of Rapidly Quenched Alloys) 375-394. [Pg.268]

This chapter is intended to cover major aspects of the deposition of metals and metal oxides and the growth of nanosized materials from metal enolate precursors. Included are most types of materials which have been deposited by gas-phase processes, such as chemical vapor deposition (CVD) and atomic layer deposition(ALD), or liquid-phase processes, such as spin-coating, electrochemical deposition and sol-gel techniques. Mononuclear main group, transition metal and rare earth metal complexes with diverse /3-diketonate or /3-ketoiminate ligands were used mainly as metal enolate precursors. The controlled decomposition of these compounds lead to a high variety of metal and metal oxide materials such as dense or porous thin films and nanoparticles. Based on special properties (reactivity, transparency, conductivity, magnetism etc.) a large number of applications are mentioned and discussed. Where appropriate, similarities and difference in file decomposition mechanism that are common for certain precursors will be pointed out. [Pg.933]

This chapter is organized in three main parts. In the first one the deposition and growth techniques generally used for the preparation of metal and metal oxide films and particles will be reported. The other two parts discuss the deposition of metals and metal oxides according to their classification as main group, transition metal and rare earth metal elements. [Pg.933]

A comparative study on rare earth metal oxide thin films of Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm grown on Si(lOO) substrates by ALD was recently published by Paivasaari, Putkonen and Niinisto (Table 7)" , using Ln(thd)3 in an ozone-containing atmosphere. From all these precursors cubic (C-type) and polycrystalline films were obtained except... [Pg.999]

Oriented growth of lanthanide oxide thin films of Sm, Eu, Gd, Er and Yb on different substrates is possible by the low-pressure MOCVD technology from the corresponding phenanthroline adducts of rare earth metal enolates Ln(acac)3(phen) as described by Shiv-ashankar and coworkers (Table As expected, the films grown at lower... [Pg.1000]

Recently, HTSC properties were found for certain new complex cuprates of alkaline-earth and rare-earth metals [237,238]. Electrosynthesis of these compounds by analogy with the formation of barium cuprate films [228,229] appears to be possible. [Pg.81]


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See also in sourсe #XX -- [ Pg.111 ]




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