Quantum effect devices

Q. Hu, S. Verghese, R. Wyss, T. Schapers, 1. delAlamo, S. Feng, K. Yakubo, M. Rooks, M. Melloch, et al. High-frequency (/ similar to 1 THz) studies of quantum-effect devices, Semi-cond. Set Technol. 11, 1888-1894 (1996). 

Bate, R.T. The Quantum-Effect Device Tomorrow s Transistor Sci. Amer.. 96 (March 1988). 

It appears possible that nanoscale quantum-effect devices may become widely used in complex electronic systems, such as a neural array of quantum dots spaced only a few 100 nm apart, but this will only take place... 

The series NanoScience and Technology is focused on the fascinating nano-world, mesoscopic physics, analysis with atomic resolution, nano and quantum-effect devices, nanomechanics and atomic-scale processes. AU the basic aspects and technology-oriented developments in this emerging discipline are covered by comprehensive and timely books. The series constitutes a siuvey of the relevant special topics, which are presented by leading experts in the field. These books will appeal to researchers, engineers, and advanced students. 

In order to support the ever-shrinking device dimensions, a dry etching technique was developed to replace wet chemical etching for high-fidelity pattern transfer by Irving and co-workers ° in 1971 in a process that involved the use of a CF4/O2 gas mixture to etch silicon wafers. Molecular beam epitaxy, developed also in 1971 by Cho, offers the advantage of near-perfect vertical control of composition and doping down to atomic dimensions, and is now applied extensively in the fabrication of photonic devices and quantum effect devices. ... 

We have overviewed some strategies for the surface-mediated fabrication of metal and alloy nanoscale wires and particles in mesoporous space, and their structural characterization and catalytic performances. Extension of the present approaches for metal/alloy nanowires may lead to the realization of the prospechve tailored design of super active, selective and stable catalysts applicable in industrial processes. The organometallic clusters and nanowires offer exciting and prospechve opportunities for the creahon of new catalysts for industry. Various metal/ alloy nanowires and nanoparhcles in the anisotropic arrangement in porous supports would help in understanding the unexpected electronic and optic properties due to the quantum effect, which are relevant to the rational design of advanced electronic and optic devices. 

Today the frontier of the fabrication of electronic devices has moved from the micrometer scale down to tens of nanometers scale. Scaled-down conventional devices such as field-effect transistors and devices based on quantum effects are two most prominent examples of the electronic miniaturisation [20, 23,430]. The major challenges in preparation of such devices are (i) growing the substrate materials and (ii) patterning the substrates. Whereas the former rely on self-organisation of the surface structure, the substrate patterning on the nanoscale requires special tools. 

Dimensions between the atomic/molecular and the bulk macroscopic scales are sometimes called mesoscopic. Because the mesoscopic scale corresponds roughly to the electron free path, unusual phenomena such as quantum effects can be observed, some of which could be used in the development of single-electron devices or quantum computers. Top-down-type nanofabrication techniques are now capable of producing structures in this size range, and research on this subject has received significant attention, especially in the held of semiconductor science and technology. 

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