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Pulse flat band potential

For semiconductor colloidal particles pulsed radiolysis techniques [103] have also been used to derive the flat-band potential. [Pg.94]

Dimitrijevic, N.M., Savic, D., Micic, O.I., Nozik, A.J. Interfacial electron-transfer equilibria and flat-band potentials of alpha-Fe203 and Ti02 colloids studied by pulse-radiolysis. J. Phys. Chem. 88, 4278 (1984)... [Pg.152]

Redox Processes at Semiconductors-Gerischer Modei and Beyond, Fig, 5 Peak value filled square) and stationary plateau value filled circle) of the photocurrent transient in response to a rectangular illumination pulse of 1 ms duration in dependence on the voltage bias. The inbuilt depletion layer voltage is decreased with the bias shifting in negative direction. The flat-band potential is at - 0.95 V. The reduced redox ions that can discharge the holes at the surface are 0.005 M 1,1 -dimethylferrocene (Reproduced from upper part of Fig. 4, Ref. [16])... [Pg.1792]


See other pages where Pulse flat band potential is mentioned: [Pg.179]    [Pg.3877]    [Pg.53]    [Pg.1440]    [Pg.403]    [Pg.212]   
See also in sourсe #XX -- [ Pg.707 ]




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