Profilometer, Dektak

Film thicknesses were measured with a profilometer (DekTak II). Electron microscope images were obtained using a field-emission scanning electron microscope (JEOL JSM-6401F). Electrical resistances (DC) were measured with a programmable electrometer (Keithley 617). A low-current scanner card and switch system (Keithley 7158/7001) was used to multiplex measurements over ten sensors fi om two sensor arrays. Instruments were controlled and read by computer using a GPIB interfece and LabView software. 

A Dektak siuface profilometer was used to measure the etch rates. The profiles of the etched films were observed by field emission scanning electron microscopy (FESEM). In addition, x-ray photoelectron spectroscopy PCPS) was utilized to examine the existence of possible etch products or redeposited materials, and to elucidate the etch mechanism of Co2MnSi magnetic films in a CVOa/Ar plasma. 

Reactive Ion Etching. Etching experiments were carried out in an Applied Materials Model 8110 Hex reactor. Alternatively, a Cook Vacuum Products Inc. Model C71 RF/DC Sputtering Module was employed. Film thickness measurements were taken before and after etching to determine etching rates, and the rates were typically compared to that of the novolac-diazoquinone photoresist, HPR-206, baked at 210 C for 1 hour. Measurements were obtained on a Dektak Model IIA profilometer. 

Surface Uniformity A Sloan Dektak IIA profilometer and a Burleigh (Metris 2000) Atomic Force Microscope (AFM) was used to examine the polished copper surfaces of the wafers. The Dektek Profilometer is capable of a vertical resolution of 5 A°. The stylus radius is 12.5 A . The scanning rate was medium and a length of 250 micron was scanned in each run. The values of... 

The results indicate that some surfactants can definitely lead to better surface finish upon polish. Table 5 gives the average RMS (root mean square) values, Ra, of surface roughness obtained with the Dektak profilometer. The measurements are carried out on both the copper disks and 4 inch copper wafers. Dramatic improvements are noticed in polished surface uniformity when surfactants Brij 35 and SDS are employed in the slurry. The destabilizing... 

The thickness of the grown oxide layers both on the porous and non-porous regions were measured by Dektak profilometer and by Rudolph ellipsometer. Also, the steps between porous and nonporous regions before and after the oxide removal were measured on each face to obtain data on the oxide propagation into por-SiC. The surface morphology of porous silicon and carbon faces before and after oxidation was analyzed by means of AFM. 

Figure 2.18 shows the dependence of oxide thickness grown on both porous and nonporous SiC substrate vs oxidation time for the oxidation temperature of 1000 °C. The oxidation rate of porous substrate on both the faces is less than the plain carbon face but higher than the plain silicon face. This difference in the oxidation rates results in a thicker oxide layer grown on a nonporous C-face than on the porous C-face and Si-face, and a thinner oxide layer grown on a nonporous Si-face than on the porous C-face and Si-face. Measurements of an oxide step by the stylus Dektak profilometer performed on the same sample allowed us to conclude that the interface between the oxide layer and a porous substrate is always below the corresponding interface for nonporous substrates in both Si-and C-faces (Figure 2.19). In order to explain this we may assume that the mechanism of oxidation of the porous SiC layer apparently consists...

The thickness of poly(oxyphenylene) layer was measured on Pt-glass substrates with profilometer (Sloan Dektak II). 

These polymers were dissolved in spectroscopic grade dioxane, and then filtered through a 0.45 pm membrane. The solutions were then spin-coated onto glass slides. The film thickness was controlled to 0.2-2.0 pm by adjusting the solution concentration and spin speed. The spin-coated films were then dried under vacuum for 24 h at 40-50 and stored in a desiccator until fiirther studies. Since the sulfonated and carboxylic substituted polyazophenols were water-soluble, deionized water was used as the solvent to dissolve these polymers (pH 11 water was used for the carboxylic substituted polyazophenol). The solutions were also filtered through a 0.45 pm membrane and the films were fabricated on glass substrates at temperature of 70 °C. The thickness of all spin-coated films was measured by using a Dektak IIA surface profilometer. 

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