Polycrystalline silicon performance improvement

Improvements in the performance of integrated circuits and the trend towards VLSI-technology require the replacement of polycrystalline silicon by materials with a lower resistivity for use as gate electrodes. Transition metal silicides appear to be valuable possibilities for these applications. Timgsten-silicon compounds could be suitable precursors for the precipitation of tungsten-silicide thin films. Moreover tungsten-silicon compounds are nearly unknown and of scientific interest. 

Another important research field aims at controlling the molecular and structural ordering of semiconducting PT in view of improving its charge transport properties. A major advance in this direction has been realized in 1987 at CNRS, Thiais, with the synthesis of sexithiophene (6T), the linear hexamer of thiophene, and its use to fabricate an organic transistor whose performances are close to those of silicon-based devices. The spectacular increase of the carrier mobility in polycrystalline... 

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