Plasma reactor configurations

Figure 9.7 Schematic of the plasma reactor configuration. Adapted from Ref 14.

Fig. 19. Schematic of common plasma reactor configurations besides the one shown in Fig. 3a. Reactive ion etching (RIE) (a), magnetically enhanced reactive ion etching (MERIE) (b), barrel (c), and downstream etching (d) reactors. In the barrel and downstream reactors etching is purely by neutral radical...

Moreover, Yamamoto et al. (Mahesh Akira, 2010) studied the decomposition characteristics and scale-up of the micro plasma reactor for the CO2 decomposition using simulation techniques. The plasma reactor configuration was modeled using the discharge and the recombination zones. In this study (Mahesh Akira, 2010), the plasma of the discharge zone is considered by the positive column and the cathode drop zone. Also, the conversion of CO2 and the energy efficiency of the reactor were evaluated. The plasma and the kinetic effects by reducing reactor diameter were analyzed separately. 

Chlorotrifluoromethane, tetrafluoromethane, hydrochlorofluorocarbons (CHCIF2), and hydrofluorocarbons (CHF3) were totally oxidized using a surface discharge plasma combined with titania-based catalysts and plasma reactor configurations, as described in Figure 17.12b [58]. Harmful products such as HQ,... 

Figure 1.18 Industrial plasma modification of textile surfaces. Plasma reactor configurations for (a) low-pressure batch processing and (b) continuous processing at atmospheric pressure. Adapted with permission from Ref [122] 1995, Institute of Physics Publishing.

PLASMA DESCUMMING Gas composition Reactor configuration Time Temperature Power Frequency Gas flow rates... 

Physical and Electrical Characteristics. The electrical potentials established in the reaction chamber determine the energy of ions and electrons striking the surfaces immersed in a discharge. Etching and deposition of thin films are usually performed in a capacitively coupled parallel-plate rf reactor (see Plasma Reactors). Therefore, the following discussion will be directed toward this configuration. 

Figure 13 Backscattering configuration at a research plasma reactor (Sommer et al, 2004).

In the balance of this chapter, we will discuss plasmas in more detail to establish a basis for a more complete understanding of the plasma-enhanced CVD process. In addition, we will discuss reactor configurations and their influence on the films grown. In a later chapter, we will review in some detail the metallic and dielectric films that are being deposited by such techniques. 

In Chapters 1 and 2, we not only covered the basics of thermal and plasma-enhanced CVD, but we described the general reactor configurations that researchers have explored over the years. From these concepts have come a few production CVD reactors that satisfy the commercial needs of the integrated circuit manufacturing process. 

In addition to thermally-created CVD films, much work has been done using glow discharges to modify the deposition. Therefore, Chapter 2 reviews the fundamentals of plasma-enhanced CVD (PECVD). Initially, the basic character of a plasma is covered. Then we discuss the influence of the reactor configuration on the plasma behavior and PECVD deposition. The two major PECVD reactor systems are reviewed, and then several new concepts are considered. 

FIGURE 7.1 Reactor configuration for gas phase reactors (a) Flame reactor, (b) furnace reactor, (c) laser reactor, (d) radio frequency (RF) plasma reactor, (e) direct current (dc) plasma reactor. 

The rate of plasma polymerization depends on the nature of the monomer gas. In addition, such parameters as flow rate, pressure, power, frequency, electrode gap and reactor configuration also strongly influence the polymerization rate for a given monomer. Generally at low flow rates there is an abundance of reactive species so the polymerization rate is limited only by the availability of monomer supply. At high flow rates, however, there is an overabundance of monomer concentration and the polymerization rate now depends on the residence time. At intermediate flow rates these two competing processes result in a maximum. This behavior is illustrated in Figure 1 for ethane, ethylene, and acetylene (11). These data also demonstrate the effect of increased unsaturation in... 

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