Plasma developable electron

In recent years, there have been some reports on plasma developable photo (5) x-ray (6) and electron beam resists (7). Although the basic principle behind the three types of resists is similar, a plasma developable electron resist (PDE) is more difficult to formulate due to the following reasons (a) the... 

In formulating a plasma developable electron resist (PDE), NVC, DPAE, MAM and ODMA have been evaluated as monomers along with PC1S, PS, PBD and PTCEM as base polymers. Aside from lithographic performance, the main issues concerning the formulation of PDE are the sublimation or vaporization of monomers under vacuum and the compatibility of the monomer with the base polymer. 

The pursuit of further miniaturization of electronic circuits has made submicrometer resolution Hthography a cmcial element in future computer engineering. LB films have long been considered potential candidates for resist appHcations, because conventional spin-coated photoresist materials have large pinhole densities and variations of thickness. In contrast, LB films are two-dimensional, layered, crystalline soHds that provide high control of film thickness and are impermeable to plasma down to a thickness of 40 nm (46). The electron beam polymerization of CO-tricosenoic acid monolayers has been mentioned. Another monomeric amphiphile used in an attempt to develop electron-beam-resist materials is a-octadecylacryUc acid (8). 

Yokota, A. Yabuta M. Kanai, W. Kakhiwaga, K. Hijikata, I. Nakane, H. "Plasma Developable Photoresist Containing Electronic Excitation Energy Quenching System," SPE Regional Technical Conference, Ellenville, New York, Nov. 1982. 

The Massachusetts Institute of Technology (MIT) has developed the tunable hybrid plasma (THP) system for the treatment of volatile organic compounds (VOCs) in gaseous waste streams. The reactor uses an electron beam to generate a plasma. The electron density of the plasma can be adjusted. This allows for the chemical reaction rates to be controlled as well as the intensity... 

A kinetic approach to the study of one-dimensional RES in a hot plasma was developed in [44] and applied to RES in an electron-positron plasma [44], electron-ion plasma [45], and electron-positron-ion plasma [46]. A highly anisotropic particle distribution function for each plasma species j (where j = e for electrons and j = i for ions) was considered, with a finite constant... 

G.N. Taylor, L.E. Stillwagon, and T. Venkatesen, Gas phase functionalized plasma developed resists Initial concepts and results for electron heam exposure, J. Electrochem. Soc. 131, 1658 (1984). 

G.N. Taylor, L.E. Stillwagon, and T. Venkatesen, Gas phase functionalized plasma developed resists Initial concepts and results for electron beam exposure, J. Electrochem. Soc. 131, 1658 (1984) M.A. Hartney, R.R. Kunz, D.J. Ehrlich, and D.C. Shaver, Silylation processes for 193 nm excimer laser hthography, Proc. SPIE 1262, 119 (1990) M.A. Hartney and J.W. Thackeray, Sily lation processes for 193 nm lithography using acid catalyzed resists, Proc. SPIE 1672, 486 (1992) ... 

The requirements of thin-film ferroelectrics are stoichiometry, phase formation, crystallization, and microstmctural development for the various device appHcations. As of this writing multimagnetron sputtering (MMS) (56), multiion beam-reactive sputter (MIBERS) deposition (57), uv-excimer laser ablation (58), and electron cyclotron resonance (ECR) plasma-assisted growth (59) are the latest ferroelectric thin-film growth processes to satisfy the requirements. 

A more advanced mirror approach involving multicells, called the tandem mirror, has been studied as a means to overcome the leakage problem. One way to view the tandem mirror is as a long uniform magnetic solenoid with two single-cell mirrors installed at the ends to electrostatically plug the device. Plasma end losses ate impeded by electrostatic potentials developed by the plasma as the electrons and ions attempt to leave the device at different rates. 

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