Plasma developable electron resists

In recent years, there have been some reports on plasma developable photo (5) x-ray (6) and electron beam resists (7). Although the basic principle behind the three types of resists is similar, a plasma developable electron resist (PDE) is more difficult to formulate due to the following reasons (a) the... 

In formulating a plasma developable electron resist (PDE), NVC, DPAE, MAM and ODMA have been evaluated as monomers along with PC1S, PS, PBD and PTCEM as base polymers. Aside from lithographic performance, the main issues concerning the formulation of PDE are the sublimation or vaporization of monomers under vacuum and the compatibility of the monomer with the base polymer. 

The pursuit of further miniaturization of electronic circuits has made submicrometer resolution Hthography a cmcial element in future computer engineering. LB films have long been considered potential candidates for resist appHcations, because conventional spin-coated photoresist materials have large pinhole densities and variations of thickness. In contrast, LB films are two-dimensional, layered, crystalline soHds that provide high control of film thickness and are impermeable to plasma down to a thickness of 40 nm (46). The electron beam polymerization of CO-tricosenoic acid monolayers has been mentioned. Another monomeric amphiphile used in an attempt to develop electron-beam-resist materials is a-octadecylacryUc acid (8). 

Resist Design and Preparation. Our objectives were to develop new resist materials which would be compatible with first generation (electron impact) and second generation (plasma) x-ray sources. 

G.N. Taylor, L.E. Stillwagon, and T. Venkatesen, Gas phase functionalized plasma developed resists Initial concepts and results for electron heam exposure, J. Electrochem. Soc. 131, 1658 (1984). 

G.N. Taylor, L.E. Stillwagon, and T. Venkatesen, Gas phase functionalized plasma developed resists Initial concepts and results for electron beam exposure, J. Electrochem. Soc. 131, 1658 (1984) M.A. Hartney, R.R. Kunz, D.J. Ehrlich, and D.C. Shaver, Silylation processes for 193 nm excimer laser hthography, Proc. SPIE 1262, 119 (1990) M.A. Hartney and J.W. Thackeray, Sily lation processes for 193 nm lithography using acid catalyzed resists, Proc. SPIE 1672, 486 (1992) ... 

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