Pixel characteristics characteristic

FIGURE 9.11 A 100 dpi AM-PLED pixel optoelectronic characteristics, (a) Optoelectrical characteristics of a typical red PLED fabricated in our laboratory on flexible plastic substrates, (b) and (c) extracted optoelectrical properties of pixel PLED. (From Hong, Y., Nahm, J.-Y., and Kanicki, J., IEEE J. Selected Top. Quantum Electron. Org. Light-Emitting Diodes, 10, 1, 2004. With permission.)... 

In JP-A-5055620 (Mitsubishi Electric Corp., Japan, 05.03.93) n-type regions are formed in a p-type layer by first providing an n-type layer in the p-type layer and then evaporating Hg from regions between pixel regions to thereby form individual n-type regions. This process provides uniform pixel characteristics because the depth of the n-type regions can be well controlled. 

Figure le-h represents the final binarized images, which have been evaluated. For PE and PLA foams, transverse SEM sections (Figures le and f, respectively), the distribution of the equivalent circular diameter of the ultramacropores, = V4A/n, where A = Number of pixels for each pore multiplied by a calibration constant, has been taken. Taking into account the complex morphology of the ultramacroporous in PLA foams, additional parameters for these pores have also been measured (1) the ultramacropore density 5m, which is defined as 5m =Number of pixels characteristic of the ultramacropores / Number of pixels of the whole... 

The large amount of S in the particles suggested that S02 gas molecules or small sulfur-containing particles condense on to the surface of soil dusts during their transportation from China. Figure 4.22 illustrates an elemental map for Si distribution in coarse particles within a total scanning area of 25 pm x 25 pm. The scale bar shows the peak count of characteristic X-rays by pixel of the scan area. 

The FRET efficiency Ed as determined above is the fraction of energy quanta absorbed by all donor molecules that is transferred to acceptors. For a given pixel, Ed effectively reflects both the efficiency with which paired donor-acceptors transfer energy (E) and the fraction of molecules in that pixel that pair up (/)>). This means, for example, that a pixel with ED = 0.2 may result from 100% of donors having =0.2, or from 20% of donors having E = 1, or anything in between. The FRET efficiency E of a donor/acceptor pair (termed characteristic FRET efficiency, Ec in some literature [2, 3]) is most often unknown. 

Figure 23. The 2D illustration of the digital pattern analysis for computing the Euler characteristic. The local curvature variables xe —1,0, +1 are assigned to the each lattice site at the boundaries of black pixels. The Euler characteristic is a sum of local curvature variables...

An example of measured a-Si H TFT driver characteristics and calculated load lines with (Far + Fpled) and without voltage drop across the active resistor is shown in Figure 9.9a [26], The crossing point between IV) l ns and load lines represents output current (/out) of the pixel... 

FIGURE 9.9 (a) The load lines of 3-a-Si H TFT pixel circuit for FDD = 20 V. The open symbol and solid line represent the load line with (FAr + FPLED) and without (FPLED) active resistor. (From Kim, J.-H. and Kanicki, J., SID Tech. Dig., 34, 18, 2003. With permission.) (b) Measured (symbol lines) and simulated (solid lines) pixel electrode output current versus input data voltage characteristics (Fiaia E gs I Foi.ko)- (From Kim, J.-H. and Kanicki, J., SID Tech. Dig., 34, 18, 2003. With permission.)... 

Optoelectronic Characteristics of Current-Driven 4-a-Si H TFTs Pixel Electrode Circuit... 

To analyze 100 dpi AM-PLED pixel operation load lines for T4 and pixel PLED were produced during deselect time. Figure 9.12a shows the measured /DS T3 versus FDS T3 characteristics for several FGS t3 and T4/pixel PLED load lines for several FDD (20, 25, 30 V). To produce the load Tines, the /pixei pled versus Fpixei pled characteristics were used in combination with the /ds T4 versus Fds T4 characteristics. For a given /data,... 

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